FCMT199N60

$4.62

Description：MOSFET N-CH 600V 20.2A POWER88
Series：SuperFET® II
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ad0ac21e8829 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 20.2A POWER88
Series：SuperFET® II
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：199mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：74 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2950 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：208W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Power88
Package / Case：4-PowerTSFN

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FCMT199N60

Overview

The FCMT199N60 is a single N-channel Power MOSFET from onsemi's SuperFET II series, utilizing silicon technology. It features a 600V drain-source breakdown voltage and a continuous drain current of 20.2A at case temperature. The device offers a maximum on-resistance of 199mΩ at 10V gate drive. Key electrical parameters include a gate charge of 57nC typical and an input capacitance of 2950pF. It operates within a junction temperature range of -55°C to 150°C with a power dissipation rating of 208W.

Feature Summary

Integrates SuperFET II shielded gate trench technology for optimized switching performance.
Provides enhanced thermal stability through low on-resistance characteristics.
Designed for high-efficiency power conversion applications requiring fast switching speeds.

Applications

High-frequency DC-DC converters
Synchronous rectification circuits
Industrial motor control systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer datasheet to ensure correct packaging configuration. Confirm RoHS compliance status and material declarations prior to integration. Cross-reference the supplier device package details with PCB land pattern requirements to guarantee mechanical fit and thermal performance.

Selection Notes

Select this component when system design requires a balance between low conduction losses and manageable gate drive requirements. Evaluate the thermal resistance capabilities relative to the expected heat dissipation in the target application environment. Ensure the operating voltage and current limits remain within the specified safe operating area boundaries.

Part Context

This part belongs to the FCMT199 family of high-voltage MOSFETs manufactured by onsemi. It utilizes the Power88 surface-mount package to facilitate automated assembly processes. The device represents a generation of superjunction transistors aimed at improving overall system efficiency in power electronics designs.