ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 600V 12A POWER88
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：299mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：51 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1948 pF @ 380 V
- FET Feature：-
- Power Dissipation (Max)：125W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Power88
- Package / Case：4-PowerTSFN
Download product information
Overview
The FCMT299N60 is an N-channel SuperFET II MOSFET manufactured by onsemi, designed for high-performance switching applications. It features a 600V drain-source voltage rating and a continuous drain current of 12A at 25°C case temperature. The device exhibits a maximum on-resistance of 299 milliohms. It operates within a junction temperature range of -55°C to +150°C and supports a power dissipation of 125W at 25°C. The component utilizes a TO-263 package configuration.
Feature Summary
- Integrates SuperFET II technology for optimized switching performance
- Provides enhanced avalanche energy capability for robust operation
- Features low thermal resistance for efficient heat dissipation
Applications
- High-efficiency power conversion circuits
- Industrial motor control systems
- Uninterruptible power supply units
Procurement Notes
Verify the specific part number against official onsemi documentation due to historical naming conventions involving underscores versus dashes. Confirm that the requested component matches the exact electrical specifications and package type required for your design. Ensure compliance with RoHS and REACH standards as indicated in the manufacturer's datasheet before finalizing procurement decisions.
Selection Notes
Select this component when a 600V rating and low on-resistance are critical for efficiency. Consider the thermal management requirements given the 125W power dissipation limit. Evaluate the gate charge characteristics against your driver capabilities to ensure optimal switching speeds. Verify compatibility with your system's voltage and current constraints during the design phase.
Part Context
This device belongs to the SuperFET II family from onsemi, which combines trench gate and field plate technologies. The FCMT299N60 represents a legacy Fairchild Semiconductor product now managed under the onsemi portfolio. It is engineered to deliver superior reliability and reduced conduction losses compared to standard MOSFETs in similar voltage classes.
Replacement Considerations
Check for updated part numbers if ordering through modern distribution channels, as underscored names may have been converted to dashed formats. Consult the official cross-reference guide for electrically equivalent alternatives with identical pinouts and thermal characteristics.
