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Product Detailed Parameters
- Description：MOSFET N-CH 600V 37A TO220-3
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：99mOhm @ 18.5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：114 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3465 pF @ 380 V
- FET Feature：-
- Power Dissipation (Max)：357W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The FCP099N60E is a single N-channel power MOSFET from the SuperFET II series, manufactured by onsemi. It features a 600V drain-source breakdown voltage and a continuous drain current of 37A at 25°C. The device exhibits a maximum on-resistance of 87mΩ. It operates within a temperature range of -55°C to +150°C junction temperature. Key electrical parameters include a gate charge of 114nC, threshold voltage of 3.5V, and power dissipation of 357W in a TO-220-3 package.
Feature Summary
- Integrates SuperFET II technology for optimized high-voltage performance
- Designed for through-hole mounting in standard TO-220-3 packages
- Features enhancement mode operation with low gate charge characteristics
Applications
- High voltage switching applications
- Power supply designs requiring robust N-channel control
- Industrial equipment utilizing through-hole power components
Procurement Notes
Verify component authenticity against official onsemi datasheets due to potential counterfeit risks. Confirm package integrity and marking accuracy upon receipt. Check for end-of-life status as indicated by distributor listings. Ensure storage conditions maintain moisture sensitivity levels. Validate supplier authorization before purchase.
Selection Notes
Select this component for applications demanding 600V blocking capability with moderate current handling. Compare on-resistance values against thermal management requirements. Consider gate charge specifications for driver compatibility. Evaluate package thermal resistance for heat sink design. Verify voltage ratings exceed peak circuit stresses.
Part Context
This part belongs to onsemi's SuperFET II family, which combines trench gate and field plate technologies. The series targets high-voltage discrete applications. The FCP099N60E represents a specific variant within this lineup, distinguished by its 87mΩ on-resistance and 37A current rating. It serves as a building block for power conversion stages.
Replacement Considerations
Consult official cross-reference guides for verified substitutes. Ensure replacement parts match voltage, current, and package specifications. Verify pinout compatibility before substitution. Check for equivalent thermal performance metrics.
