FCP099N65S3

Overview

The FCP099N65S3 is an N-channel SuperFET III MOSFET from onsemi, utilizing charge-balanced superjunction technology. It features a 650V drain-source voltage rating and a maximum on-resistance of 99mΩ at VGS=10V. The device supports a continuous drain current of 30A at TC=25°C and handles a pulsed current of 75A. Key electrical parameters include a typical gate charge of 57nC and a typical effective output capacitance of 517pF. It operates within a junction temperature range up to 150°C and has been subjected to 100% avalanche testing for reliability.

Feature Summary

• Employs charge-balanced superjunction technology to minimize conduction losses while maintaining excellent switching performance.
• Capable of withstanding high dv/dt rates, which helps mitigate electromagnetic interference (EMI) issues in designs.
• Features low gate charge and low output capacitance to facilitate fast switching and reduce switching energy loss.
• Manufactured using lead-free materials compliant with RoHS standards.

Applications

• Telecommunications and server power supplies
• Industrial power systems
• Uninterruptible Power Supply (UPS) units
• Solar energy conversion systems

Procurement Notes

Verify the specific package type against your design requirements, as datasheets may list variations or suffixes. Confirm that the component meets all necessary environmental compliance standards for your target market. Ensure that the thermal management solution aligns with the specified power dissipation limits under your operating conditions. Cross-reference the manufacturer's latest documentation to confirm availability status and any potential lifecycle changes before finalizing procurement plans.

Selection Notes

Select this component when designing circuits requiring high-voltage handling with optimized efficiency. The low on-resistance makes it suitable for applications where minimizing conduction loss is critical. Its robust switching characteristics support high-frequency operation, reducing passive component size. Consider the thermal environment carefully, as performance metrics are temperature-dependent. This device is appropriate for space-constrained designs benefiting from its efficient charge balance technology.

Part Context

This part belongs to the SuperFET III family, representing onsemi's advanced high-voltage superjunction MOSFET portfolio. These devices integrate proprietary charge-balanced structures to overcome traditional silicon limitations. The series is engineered for high-efficiency power conversion, offering a balance between low static losses and dynamic switching performance. It serves as a key enabling technology for modern compact and reliable power supply architectures.

Replacement Considerations

Direct substitutes within the same SuperFET III family include parts with similar voltage ratings and resistance values, such as the FCPF099N65S3. When replacing, verify pinout compatibility and ensure the alternative device meets or exceeds the required RDS(on) and current handling capabilities. Always consult the official datasheet for the replacement part to confirm mechanical dimensions and thermal characteristics match the existing footprint.