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Product Detailed Parameters
- Description：POWER FIELD-EFFECT TRANSISTOR, 3
- Series：SuperFET® II
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：104mOhm @ 18.5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：82 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4165 pF @ 380 V
- FET Feature：-
- Power Dissipation (Max)：357W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The FCP104N60 is an N-Channel SuperFET II MOSFET manufactured by onsemi, formerly Fairchild Semiconductor. It features a 600V drain-source voltage and a continuous drain current of 37A at case temperature. The device exhibits a maximum on-resistance of 104mΩ at 18.5A with a 10V gate drive. Packaged in a TO-220-3 through-hole housing, it supports a power dissipation of 357W and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- SuperFET II technology integrates the MOSFET and body diode for optimized performance
- Enhanced switching speed reduces dynamic losses during operation
- 100% avalanche tested to ensure robustness under high-energy pulse conditions
Applications
- AC-DC power supplies
- High-efficiency switch mode power supplies
- Lighting applications
Procurement Notes
Verify the manufacturer designation carefully, as Fairchild Semiconductor has been integrated into onsemi. Confirm that the specific part number matches the required package style and electrical ratings against the official datasheet before procurement. Ensure compliance with RoHS standards if applicable to your system requirements.
Selection Notes
Select this component for designs requiring low conduction losses and fast switching capabilities in medium-power applications. The TO-220-3 package facilitates thermal management for moderate power levels. Consider the gate charge and threshold voltage when designing the driver circuitry to ensure efficient turn-on and turn-off transitions.
Part Context
This device belongs to the SuperFET II FRFET series, which combines advanced planar stripe DMOS technology with a monolithic body diode. The integration aims to minimize on-state resistance while providing superior switching performance. This family is designed for high efficiency in power conversion systems where thermal performance and reliability are critical.
Replacement Considerations
Check for equivalent parts from onsemi or other manufacturers offering similar 600V N-Channel specifications. Verify pinout compatibility and thermal characteristics when substituting. Note that naming conventions may vary due to the Fairchild-onsemi integration.
