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The FCP110N65F is a power N-channel MOSFET from the SUPERFET III family. It features a breakdown voltage of 650 V and a continuous drain current of 30 A. The device has a maximum on-state resistance of 110 mΩ at VGS = 10 V. It utilizes FRFET technology for optimized switching performance.
Verify the specific datasheet revision and ordering suffix to ensure compatibility with your design requirements. Confirm compliance status and package details directly with the manufacturer or authorized distributors before procurement.
Select this component for applications requiring high voltage isolation and efficient power switching. Consider the thermal characteristics and gate charge specifications when designing the drive circuitry to ensure optimal performance and reliability in high-frequency operations.
This part belongs to the SUPERFET III series, which combines low RDS(on) with fast switching capabilities. It is designed for high-efficiency power conversion applications, offering improved thermal performance compared to previous generations.
Check for direct pin-compatible alternatives within the same SUPERFET III family. Verify electrical parameters such as VBRDSS, ID, and RDS(on) match or exceed the original specifications for safe substitution.