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Product Detailed Parameters
- Description：MOSFET N-CH 600V 11A TO220-3
- Series：SuperFET™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：380mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：52 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1490 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：125W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The onsemi FCP11N60 is an N-channel enhancement mode MOSFET from the SuperFET series, utilizing charge balance technology for low on-resistance and gate charge. It features a maximum drain-source voltage of 600 V and a continuous drain current of 11 A at 25°C case temperature. The device has a typical Rds(on) of 380 mΩ and a gate charge of 40 nC at 10 V. Packaged in TO-220AB for through-hole mounting, it supports a power dissipation of 125 W and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Employs SuperFET charge balance technology to achieve low conduction losses and high switching efficiency.
- Provides robust avalanche energy capability with 100% avalanche testing for enhanced reliability.
- Features low effective output capacitance to minimize switching losses during operation.
Applications
- Power factor correction (PFC) circuits
- Server and telecommunications power supplies
- Flat panel television power systems
- ATX computer power supplies
- Industrial power supply units
Procurement Notes
Verify the specific suffix against official datasheets to confirm package type and electrical tolerances. Ensure compliance with RoHS standards if required by the design. Confirm thermal management requirements align with the specified power dissipation limits. Check for availability of engineering samples before mass production commitment.
Selection Notes
Select this component for applications requiring high voltage blocking with efficient switching characteristics. The TO-220AB package facilitates easy integration into through-hole designs with standard heatsinking solutions. Consider the gate charge specifications when designing drive circuits to optimize switching speed and minimize driver losses.
Part Context
This device belongs to the SuperFET family, representing onsemi's first generation of high-voltage superjunction MOSFETs. The series focuses on balancing low on-resistance with minimal gate charge to improve overall system efficiency in power conversion applications.
Replacement Considerations
Check for direct pin-compatible alternatives within the same voltage and current ratings. Verify that any substitute maintains or improves upon the Rds(on) and Qg specifications to ensure circuit performance is not degraded.
