FCP11N60F

FCP11N60F

$2.84
  • Description:MOSFET N-CH 600V 11A TO220-3
  • Series:SuperFET™
  • Mfr:onsemi
  • Package:Tube

SKU:c27c9e086250 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 600V 11A TO220-3
  • Series:SuperFET™
  • Mfr:onsemi
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:380mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id:5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:52 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:1490 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):125W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220-3
  • Package / Case:TO-220-3

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FCP11N60F

Overview

The onsemi FCP11N60F is an N-channel enhancement mode MOSFET from the SuperFET series, utilizing charge-balanced superjunction technology. It features a maximum drain-source voltage of 600 V and a continuous drain current of 11 A at 25°C case temperature. The device exhibits a typical on-resistance of 380 mΩ and a gate charge of 40 nC at 10 V. It operates within a junction temperature range of -55 °C to +150 °C and is housed in a TO-220AB three-pin through-hole package.

Feature Summary

  • SuperFET superjunction architecture with charge balance for low conduction and switching losses
  • High avalanche energy capability validated by 100% avalanche testing
  • Low effective output capacitance to reduce switching energy dissipation
  • Lead-free construction compliant with RoHS standards

Applications

  • Power factor correction circuits
  • Server and telecommunications power supplies
  • Flat panel television power systems
  • ATX computer power supplies
  • Industrial power conversion units

Procurement Notes

Verify the specific ordering suffix against official datasheets to confirm pinout compatibility and thermal characteristics. Ensure the procurement channel provides valid traceability documentation. Confirm that the received components match the exact part number designation to avoid substitution errors in high-voltage applications requiring precise electrical parameters.

Selection Notes

Select this component for designs requiring robust high-voltage handling with efficient thermal management in through-hole layouts. The combination of low gate charge and high avalanche rating supports reliable operation in hard-switching environments. Evaluate the thermal resistance requirements of the TO-220AB package against the expected power dissipation levels during continuous operation.

Part Context

This device belongs to the SuperFET family, representing onsemi's first generation of high-voltage superjunction MOSFETs. The series integrates advanced silicon processes to achieve superior performance metrics compared to traditional planar technologies. It serves as a foundational component for modern efficient power conversion architectures demanding high reliability.

Replacement Considerations

FCPF11N60F is a documented variant within the same functional family.

FCP11N60FFCP11N60F
$2.84
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