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The onsemi FCP11N60F is an N-channel enhancement mode MOSFET from the SuperFET series, utilizing charge-balanced superjunction technology. It features a maximum drain-source voltage of 600 V and a continuous drain current of 11 A at 25°C case temperature. The device exhibits a typical on-resistance of 380 mΩ and a gate charge of 40 nC at 10 V. It operates within a junction temperature range of -55 °C to +150 °C and is housed in a TO-220AB three-pin through-hole package.
Verify the specific ordering suffix against official datasheets to confirm pinout compatibility and thermal characteristics. Ensure the procurement channel provides valid traceability documentation. Confirm that the received components match the exact part number designation to avoid substitution errors in high-voltage applications requiring precise electrical parameters.
Select this component for designs requiring robust high-voltage handling with efficient thermal management in through-hole layouts. The combination of low gate charge and high avalanche rating supports reliable operation in hard-switching environments. Evaluate the thermal resistance requirements of the TO-220AB package against the expected power dissipation levels during continuous operation.
This device belongs to the SuperFET family, representing onsemi's first generation of high-voltage superjunction MOSFETs. The series integrates advanced silicon processes to achieve superior performance metrics compared to traditional planar technologies. It serves as a foundational component for modern efficient power conversion architectures demanding high reliability.
FCPF11N60F is a documented variant within the same functional family.