ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 600V 10.8A TO220-3
- Series：SupreMOS™
- Mfr：onsemi
- Package：Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：10.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：299mOhm @ 5.4A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：35.6 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1505 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：94W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
Download product information
Overview
The onsemi FCP11N60N is an N-channel enhancement mode MOSFET belonging to the SuperFET series, utilizing charge balance technology for high-voltage applications. It features a maximum drain-source voltage of 600 V and a continuous drain current of 11 A at 25°C case temperature. The device exhibits a typical on-resistance of 320 mΩ and a low gate charge of 40 nC. Rated for power dissipation up to 125 W in a TO-220-3 package, it supports junction temperatures from -55°C to +150°C.
Feature Summary
- SuperFET charge balance technology reduces conduction losses and improves switching performance.
- High avalanche energy capability ensures robust reliability under transient conditions.
- Low effective output capacitance minimizes switching losses during operation.
Applications
- Power factor correction (PFC) circuits
- Server and telecommunications power supplies
- Industrial power conversion systems
Procurement Notes
Verify the specific suffix 'N' against official datasheets to confirm compliance with RoHS directives and material composition requirements. Ensure the ordering part number matches the exact electrical ratings and package type required for the target design to avoid compatibility issues.
Selection Notes
Select this component for designs requiring high voltage isolation with efficient thermal management in through-hole configurations. Consider the trade-off between the 320 mΩ on-resistance and the 40 nC gate charge when optimizing for either conduction efficiency or switching speed in hard-switching topologies.
Part Context
This device is part of the SuperFET family, representing onsemi's first generation of high-voltage superjunction MOSFETs. It serves as a legacy alternative to newer SupreMOS generations, offering proven reliability for standard 600V applications where through-hole mounting is preferred over surface-mount solutions.
Replacement Considerations
Direct substitutes include FCP11N60 and FCPF11N60. Verify pinout compatibility and ensure the replacement meets the same 600V/11A specifications and TO-220-3 package dimensions.
