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Product Detailed Parameters
- Description：MOSFET N-CH 600V 29A TO220-3
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：125mOhm @ 14.5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：95 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2990 pF @ 380 V
- FET Feature：-
- Power Dissipation (Max)：278W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The FCP125N60E is a single N-channel power MOSFET from onsemi's SuperFET II family, designed for high-voltage switching applications. It features a 600V drain-source breakdown voltage and a continuous drain current of 34A. The device exhibits a maximum on-resistance of 125mΩ at VGS=10V. Packaged in a TO-220-3 through-hole configuration, it supports a power dissipation of 387W and operates within a temperature range of -55°C to +150°C.
Feature Summary
- Integrated SuperFET II technology combining low RDS(on) with optimized gate charge for efficient switching performance.
- High avalanche energy capability designed to withstand rugged operating conditions and transient stress events.
- Enhanced thermal design utilizing a robust package structure to facilitate effective heat dissipation in high-power circuits.
Applications
- High-frequency switch-mode power supplies
- Industrial motor control systems
- DC-to-AC inverters
Procurement Notes
Verify the specific datasheet revision and ordering suffixes directly with onsemi or authorized distributors to ensure compatibility with your design requirements. Confirm RoHS compliance status and lead times prior to finalizing procurement plans, as manufacturing schedules may vary by region.
Selection Notes
Select this component when designing circuits requiring high voltage isolation and moderate switching speeds. Ensure adequate heatsinking is provided to manage the 387W power dissipation rating under full load conditions. Verify that the gate drive voltage aligns with the specified threshold characteristics for optimal conduction.
Part Context
This part belongs to the SuperFET II series, which integrates a trench MOSFET with an intelligent gate driver. This architecture reduces total gate charge and switching losses compared to standard discrete MOSFETs, making it suitable for efficient power conversion topologies.
Replacement Considerations
Check for direct pin-compatible alternatives within the same SuperFET II family with similar voltage and current ratings. Verify that any substitute maintains equivalent thermal resistance and gate charge specifications to ensure circuit stability.
