FCP125N65S3

Overview

The onsemi FCP125N65S3 is an N-channel enhancement-mode MOSFET belonging to the SUPERFET III series, utilizing charge balance technology for high-voltage performance. It features a maximum drain-source voltage (Vdss) of 650 V and a continuous drain current (Id) of 24 A at 25°C. The device exhibits a typical on-resistance (Rds(on)) of 105 mΩ and a gate charge (Qg) of 46 nC. Packaged in a TO-220 through-hole housing with three pins, it supports a maximum power dissipation of 181 W and operates within a temperature range of -55°C to +150°C.

Feature Summary

• Employs SuperFET III charge balance technology to achieve low on-resistance and reduced gate charge for efficient switching.
• Provides robust avalanche energy handling capability verified through 100% avalanche testing.
• Designed for easy driving characteristics that assist in mitigating electromagnetic interference (EMI) issues.

Applications

• Telecommunications and server power supply systems
• Industrial power conversion equipment
• Uninterruptible Power Supply (UPS) units
• Solar energy inverter applications

Procurement Notes

Verify the specific suffix against official datasheets to confirm package variations or tape-and-reel configurations. Confirm RoHS compliance status and environmental declarations directly from the manufacturer's documentation prior to integration. Ensure thermal management designs align with the specified power dissipation limits.

Selection Notes

Select this component for high-efficiency hard-switching applications requiring 650 V blocking capability. The low gate charge facilitates faster switching speeds and reduces driver losses. Evaluate thermal resistance requirements carefully given the TO-220 package constraints for high-current operations.

Part Context

This part belongs to the SUPERFET III family of high-voltage superjunction MOSFETs from onsemi. The series integrates advanced silicon processes to optimize the trade-off between conduction and switching losses, targeting high-frequency power conversion architectures.

Replacement Considerations

Direct substitutes include FCP190N65S3 and FCPF250N65S3L1-F154 within the same product line. Verify pinout compatibility and electrical parameter margins before substitution.

FAQ

Is the FCP125N65S3 suitable for high dv/dt environments?

Yes, the SuperFET III technology enables the device to withstand high dv/dt rates while maintaining stable operation.

What is the typical gate charge value for this MOSFET?

The typical gate charge (Qg) is 46 nC, which contributes to lower drive power requirements.