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Product Detailed Parameters
- Description：MOSFET N-CH 600V 28A TO220-3
- Series：SuperFET® II
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：130mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：70 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3590 pF @ 380 V
- FET Feature：-
- Power Dissipation (Max)：278W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The FCP130N60 is an N-Channel SuperFET II MOSFET manufactured by Fairchild Semiconductor. It features a 600V drain-source voltage rating and a continuous drain current of 25A at case temperature. The device exhibits a maximum on-resistance of 130 milliohms when driven at 10V with a drain current of 8A. Key electrical characteristics include a gate charge of 45nC at 10V, an input capacitance of 2170pF at 25V, and a power dissipation capacity of 190W at case temperature. It operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- Integrates SuperFET II technology for optimized switching performance and reduced conduction losses.
- Provides high-voltage blocking capability suitable for robust power switching applications.
- Designed for efficient thermal management with specified power dissipation ratings.
Applications
- High-frequency power conversion circuits
- Industrial motor control systems
- Uninterruptible power supply (UPS) units
Procurement Notes
Verify the specific manufacturer source, as Fairchild Semiconductor's discrete product lines were acquired by ON Semiconductor. Confirm component authenticity and datasheet revision status through authorized distributors or official semiconductor documentation repositories to ensure compliance with current manufacturing standards.
Selection Notes
Select this component for designs requiring a balance of low on-resistance and high voltage tolerance in through-hole configurations. Evaluate thermal requirements against the 190W dissipation limit and ensure gate drive voltages align with the 10V specification for optimal Rds(on) performance.
Part Context
This part belongs to the SuperFET II family, which combines trench gate and superjunction technologies. This architecture aims to minimize figure-of-merit metrics compared to traditional planar MOSFETs, offering improved efficiency in hard-switching applications.
Replacement Considerations
Potential substitutes within the same series include FCP104N60 and FCP150N60. Verify pin compatibility and electrical parameter margins before substitution.
