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Product Detailed Parameters
- Description：POWER FIELD-EFFECT TRANSISTOR, 1
- Series：SupreMOS™
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：258mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：39.5 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1765 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：116W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The FCP13N60N is a SupreMOS N-Channel MOSFET manufactured by Fairchild Semiconductor. It features a 600V drain-source voltage rating and a continuous drain current of 13A at case temperature. The device utilizes deep trench filling technology to achieve a typical on-resistance of 0.244Ω at VGS=10V and ID=6.5A, alongside an ultra-low gate charge of approximately 30.4nC. It is designed for high-efficiency switching applications.
Feature Summary
- Employs deep trench filling process for superior specific on-resistance and ruggedness
- Provides ultra-low gate charge for enhanced switching performance
- Features low effective output capacitance
- Subjected to 100% avalanche testing
Applications
- AC-DC Switch Mode Power Supplies (SMPS)
- Power Factor Correction (PFC) circuits
- Server and telecom power supplies
- Flat Panel Display TV power systems
- ATX power supplies
- Industrial power applications
Procurement Notes
Verify the manufacturer source, as Inchange Semiconductor also lists this part number. Confirm RoHS compliance status and check for any package variations or suffix differences that may affect pinout or thermal characteristics before finalizing procurement.
Selection Notes
Select this component for designs requiring high-voltage handling with optimized switching losses. The low gate charge reduces driver requirements, while the robust avalanche rating ensures reliability in inductive load scenarios common in power conversion topologies.
Part Context
This device belongs to the SupreMOS series, representing Fairchild's next-generation high-voltage super-junction MOSFETs. It differentiates itself from preceding multi-epi technologies through precise process control and advanced trench filling, targeting efficiency improvements in modern power electronics.
Replacement Considerations
Potential substitutes include STW13NB60 and FDP17N60N. Verify electrical parameters such as Rds(on) and Qg against original design specifications to ensure compatibility.
