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Product Detailed Parameters
- Description：MOSFET N-CH 650V 24A TO220-3
- Series：HiPerFET™, Polar™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：150mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：5V @ 2.4mA
- Gate Charge (Qg) (Max) @ Vgs：93 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3737 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：298W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The FCP150N65F is a SuperFET II N-channel power MOSFET manufactured by onsemi. It features a 650V drain-source voltage rating and a maximum continuous drain current of 24A at 25°C. The device offers a typical on-resistance (Rds(on)) of 150mΩ. It utilizes a TO-220FP-3 through-hole package with a thermal resistance characteristic suitable for high-power applications. Key switching parameters include a gate charge of 72nC, turn-on delay time of 28ns, and fall time of 6ns. The component operates within a temperature range of -55°C to +150°C junction temperature.
Feature Summary
- SuperFET II technology integrates logic-level gate drive with low on-resistance for optimized efficiency.
- Enhanced avalanche ruggedness supports robust performance under inductive load switching conditions.
- Fast switching characteristics minimize dynamic power losses in high-frequency operation.
Applications
- High-efficiency DC-DC converters
- Motor control systems
- Industrial power supplies
Procurement Notes
Verify the specific suffix and revision level against the manufacturer's latest datasheet before procurement. Confirm that the TO-220FP-3 package dimensions match the target PCB footprint. Ensure thermal management solutions are compatible with the specified power dissipation limits. Check for RoHS compliance documentation if required by local regulations.
Selection Notes
Select this component when a balance between low conduction loss and fast switching speed is required in medium-power applications. The 650V rating provides sufficient headroom for standard industrial bus voltages. Consider the 24A current capability relative to the expected thermal environment and heatsinking constraints.
Part Context
This part belongs to the SuperFET II family, which combines trench gate technology with advanced process improvements. It is designed to replace older discrete MOSFETs or IGBTs in applications where efficiency and size are critical. The TO-220FP-3 package allows for direct mounting to heat sinks using standard hardware.
Replacement Considerations
Direct replacements must match the 650V Vds, 150mΩ Rds(on), and TO-220FP-3 package. Verify pinout compatibility and thermal resistance values. Cross-reference with other SuperFET II variants from onsemi for potential upgrades in Rds(on) or switching speed.
