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Product Detailed Parameters
- Description：MOSFET N-CH 650V 19A TO220-3
- Series：SuperFET® III
- Mfr：onsemi
- Package：Bulk,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：165mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 1.9mA
- Gate Charge (Qg) (Max) @ Vgs：39 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1500 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：154W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The FCP165N65S3R0 is a single N-channel enhancement mode MOSFET from the SuperFET III series, manufactured by onsemi. It utilizes silicon technology and features a TO-220-3 through-hole package. Key electrical parameters include a drain-source voltage of 650 V, continuous drain current of 19 A, and a maximum on-resistance of 165 mΩ. The device operates within a temperature range of -55°C to +150°C, with a power dissipation rating of 154 W.
Feature Summary
- SuperFET III architecture employing charge balance technology for low conduction losses
- Optimized gate charge characteristics facilitating easy driver compatibility
- High dv/dt capability supporting robust switching performance
- Enhanced avalanche ruggedness verified through testing
Applications
- Telecommunications and server power supplies
- Industrial power conversion systems
- Uninterruptible Power Supply (UPS) units
- Solar energy inverter applications
Procurement Notes
Verify component authenticity and datasheet revisions prior to integration. Confirm RoHS compliance status and REACH SVHC declarations against current regulatory requirements. Ensure thermal management solutions align with the specified 154 W power dissipation limits under expected operating conditions.
Selection Notes
Select this component for designs requiring high-voltage handling with moderate current capacity. The TO-220-3 package suits through-hole mounting strategies. Evaluate thermal resistance constraints carefully, as the package limits heat dissipation compared to larger form factors. Compare gate charge specifications against available driver capabilities to ensure efficient switching transitions.
Part Context
This part belongs to the SuperFET III family, which integrates advanced superjunction structures. These devices are engineered to minimize both on-resistance and gate charge simultaneously. The series targets high-efficiency power conversion applications where reduced switching losses and improved thermal performance are critical design priorities.
Replacement Considerations
FCPF165N65S3R0L serves as a lead-free variant within the same specification envelope. Cross-reference pinouts and thermal characteristics when substituting between standard and lead-free packaging options.
