FCP16N60N

Overview

The FCP16N60N is an N-Channel SupreMOS MOSFET manufactured by Fairchild Semiconductor, now part of ON Semiconductor. It features a 600V drain-to-source voltage (BVDSS) and a continuous drain current (ID) of 16A at a case temperature of 25°C. The device has a maximum gate-to-source voltage (VGSS) of ±30V and a typical static drain-to-source on-resistance (RDS(on)) of 170 mΩ at VGS = 10V and ID = 8A. It utilizes a TO-220 package with a maximum junction-to-case thermal resistance (RθJC) of 0.93°C/W.

Feature Summary

• Employs deep trench filling super-junction technology for low on-resistance and superior switching performance.
• Features ultra-low gate charge to minimize conduction losses and enhance efficiency in high-frequency applications.
• Includes integrated body diode with rugged peak diode recovery dv/dt capability.

Applications

• Power Factor Correction (PFC) converters
• Server and telecom power supplies
• Flat Panel Display (FPD) TV power circuits
• ATX power supplies

Procurement Notes

Verify the manufacturer status as Fairchild Semiconductor products are now managed under ON Semiconductor. Confirm that the specific ordering suffix matches the required package type, as the datasheet indicates potential nomenclature changes from underscores to dashes during system integration. Ensure compliance with RoHS standards and check for any design or process change notifications prior to finalizing procurement specifications.

Selection Notes

Select this component for designs requiring high-voltage handling up to 600V with moderate current capabilities of 16A. Consider the thermal management requirements based on the 0.93°C/W junction-to-case resistance when designing heat sinks. Validate the switching speed against the specified turn-on and turn-off times to ensure compatibility with the target frequency of the power converter application.

Part Context

This component belongs to the SupreMOS family, representing a generation of high-voltage super-junction MOSFETs. It is designed to replace conventional MOSFETs in applications demanding higher efficiency and reduced switching losses. The product line includes variants like the FCPF16N60NT, which shares similar electrical characteristics but differs in packaging.

Replacement Considerations

Check for updated part numbers on the ON Semiconductor website due to naming convention changes from Fairchild. Verify if the FCPF16N60NT serves as a direct functional equivalent with different packaging constraints.

FAQ

What is the maximum single pulsed avalanche energy rating?

The maximum single pulsed avalanche energy (EAS) is rated at 355 mJ.

Does the device support high dv/dt rates?

Yes, the MOSFET supports a dv/dt rate of 100 V/ns and a peak diode recovery dv/dt of 20 V/ns.