FCP16N60N-F102

Description：MOSFET N-CH 600V 16A TO220F
Series：-
Mfr：onsemi
Package：Tube

SKU:df89d93db3f4 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 16A TO220F
Series：-
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：199mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：52.3 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：2170 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：134.4W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F
Package / Case：TO-220-3 Full Pack

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FCP16N60N-F102

Overview

The FCP16N60N-F102 is a single N-channel Power MOSFET from onsemi, utilizing SuperFET charge-balanced superjunction technology. It features a 600V drain-source voltage rating and a continuous drain current of 16A at 25°C case temperature. The device offers a maximum on-resistance of 260mΩ and a gate threshold voltage of 5V. Packaged in a TO-220-3 through-hole configuration, it supports a power dissipation of 167W and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

SuperFET charge-balanced superjunction technology for low conduction losses
High avalanche energy capability with robust dv/dt performance
Through-hole TO-220-3 package for efficient thermal management

Applications

Power Factor Correction (PFC) circuits
Server and telecommunications power supplies
Flat Panel Display (FPD) TV power adapters
ATX computer power supplies
Industrial power supply systems

Procurement Notes

Verify the specific suffix 'F102' against official onsemi documentation to confirm tape-and-reel packaging or specific marking variations. Ensure the component matches the standard FCP16N60 electrical specifications unless the datasheet explicitly defines unique parameters for this suffix variant. Cross-reference RoHS compliance status directly with the manufacturer's latest material declaration.

Selection Notes

Select this component for designs requiring high-voltage switching with optimized efficiency. The combination of low Rds(on) and reduced gate charge minimizes both conduction and switching losses. The TO-220-3 package facilitates direct heatsinking for high-power applications. Evaluate thermal resistance requirements based on the intended operating environment and duty cycle constraints.

Part Context

This part belongs to the SuperFET family, representing onsemi's first generation of superjunction MOSFETs. These devices integrate charge-balanced technology to surpass traditional planar MOSFET performance limits. The series targets high-efficiency power conversion needs across industrial and consumer electronics sectors.