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Product Detailed Parameters
- Description：MOSFET N-CH 600V 22A TO220-3
- Series：SuperFET® II
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：170mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：55 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2860 pF @ 380 V
- FET Feature：-
- Power Dissipation (Max)：227W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The FCP170N60 is a through-hole N-channel power MOSFET manufactured by Fairchild Semiconductor, belonging to the SuperFET II series. It features a 600V drain-source voltage rating and supports a continuous drain current of 22A at case temperature. The device exhibits a maximum on-resistance of 170 milliohms when driven at 10V with an 11A current. Key electrical characteristics include a gate charge of 55 nC at 10V, a threshold voltage of 3.5V maximum, and an input capacitance of 2860 pF at 380V. It is housed in a TO-220-3 package with a maximum power dissipation of 227W.
Feature Summary
- Utilizes SuperFET II technology for enhanced switching performance and efficiency.
- Designed for high-voltage applications with a 600V breakdown capability.
- Features low on-resistance to minimize conduction losses.
Applications
- High-frequency switch-mode power supplies
- Motor control circuits
- DC-to-DC converters
Procurement Notes
Verify component authenticity due to discontinued status. Confirm package integrity upon receipt. Check datasheet revisions for updated thermal parameters. Ensure compatibility with existing PCB footprints. Validate supplier documentation against original manufacturer records.
Selection Notes
Evaluate thermal management requirements given the 227W dissipation limit. Compare on-resistance values against system efficiency targets. Verify gate drive voltage compatibility with the 10V specification. Assess package suitability for intended mounting method.
Part Context
This component is part of the Fairchild Semiconductor SuperFET II family, which integrates advanced trench gate technology. The FCP170N60 represents a specific configuration within this lineup, optimized for high-voltage switching applications requiring robust performance in standard through-hole packages.
Replacement Considerations
Check for direct equivalents from ON Semiconductor following the Fairchild integration. Verify pinout compatibility before substitution. Review updated datasheets for any parameter shifts in successor parts.
