FCP170N60

$5.01

Description：MOSFET N-CH 600V 22A TO220-3
Series：SuperFET® II
Mfr：onsemi
Package：Tube

SKU:0e9f9109e5c6 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 22A TO220-3
Series：SuperFET® II
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：170mOhm @ 11A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：55 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2860 pF @ 380 V
FET Feature：-
Power Dissipation (Max)：227W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

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FCP170N60

Overview

The FCP170N60 is a single N-channel power MOSFET manufactured by onsemi, formerly Fairchild Semiconductor. It utilizes SuperFET II technology and is housed in a TO-220-3 through-hole package. The device features a drain-source voltage (Vds) of 600 V and a continuous drain current (Id) of 22 A at case temperature. Key electrical parameters include a maximum on-resistance (Rds(on)) of 170 mΩ at Vgs = 10 V and a gate charge (Qg) of 55 nC at 10 V. It operates within a junction temperature range of -55°C to +150°C with a maximum power dissipation of 227 W.

Feature Summary

SuperFET II technology for high efficiency
High voltage capability up to 600 V
Through-hole TO-220-3 packaging

Applications

Procurement Notes

Verify the component status carefully as this part number is listed as obsolete or discontinued by the manufacturer. Sourcing may be limited to third-party distributors or surplus markets rather than direct factory production. Confirm the specific revision and authenticity of available stock before procurement decisions.

Selection Notes

Select this component only if legacy compatibility with older designs is required. Evaluate alternative active parts from the same family that offer updated availability while maintaining similar electrical characteristics. Ensure thermal management solutions accommodate the specified power dissipation limits in the target application environment.

Part Context

This device belongs to the SuperFET II series, which integrates advanced trench MOSFET technology. The series is designed to reduce switching losses and improve overall system efficiency in power conversion applications. The FCP170N60 represents a specific configuration within this lineup optimized for high-voltage operations.