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Product Detailed Parameters
- Description：MOSFET N-CH 600V 20.6A TO220-3
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：20.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：190mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：82 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3175 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：208W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The onsemi FCP190N60E is an N-channel enhancement-mode MOSFET from the SuperFET II series, housed in a TO-220 package. It features a drain-source voltage (Vds) of 600 V and a continuous drain current (Id) of 20.6 A. The device exhibits a maximum on-resistance (Rds(on)) of 0.19 Ω at 10 V gate drive. Key electrical parameters include a typical gate charge (Qg) of 63 nC, a threshold voltage (Vgs(th)) of 2.5 V, and a power dissipation (Pd) of 208 W. Operating temperatures range from -55°C to +150°C.
Feature Summary
- SuperFET II technology integrates body diode for optimized switching performance
- Enhanced avalanche ruggedness for robust operation under stress
- Low gate charge facilitates efficient driver interface
Applications
- High-frequency power supplies
- Uninterruptible Power Supply (UPS) systems
- DC-to-DC converters
Procurement Notes
Verify the specific suffix 'E' against official datasheets to confirm RoHS compliance status and lead-free manufacturing details. Ensure the TO-220-3 pinout matches the target PCB footprint. Confirm thermal management requirements align with the 208 W dissipation rating under intended operating conditions.
Selection Notes
Select this component for applications requiring high voltage blocking capability combined with low conduction losses. The SuperFET II architecture offers improved efficiency compared to standard planar technologies. Evaluate thermal resistance values to ensure adequate heat sinking for sustained 20.6 A loads.
Part Context
This part belongs to onsemi's SuperFET II family, designed for high-efficiency power conversion. It utilizes advanced trench gate and field plate technology to reduce on-resistance while maintaining high breakdown voltage capabilities suitable for industrial and consumer power electronics.
Replacement Considerations
FCP190N60: Similar specifications but verify if the non-E suffix meets required environmental standards. FCP20N60: Check if the slightly higher Rds(on) and lower current rating are acceptable for the specific load profile.
