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Product Detailed Parameters
- Description：MOSFET N-CH 650V 20.6A TO220-3
- Series：FRFET®, SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：20.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：190mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：5V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs：78 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3225 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：208W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The onsemi FCP190N65F is an N-channel enhancement mode MOSFET belonging to the SuperFET II series. It features a 600V drain-source voltage rating and a maximum continuous drain current of 20.6A. The device utilizes a TO-220 package for through-hole mounting with three pins. Key electrical parameters include a maximum drain-source resistance of 0.19Ω, typical gate charge of 63nC at specified Vgs, and maximum power dissipation of 208W. Operating temperatures range from -55°C to 150°C, with a maximum gate-source voltage of 30V AC.
Feature Summary
- Integrated body diode with low reverse recovery charge for efficient switching
- SuperFET II technology optimized for high-voltage hard-switching applications
- Enhanced avalanche ruggedness for robust performance under stress
Applications
- High-frequency power supplies
- Motor control systems
- Industrial inverters
Procurement Notes
Verify the specific suffix 'F' against official datasheets to confirm pinout and thermal characteristics. Ensure compatibility with existing PCB footprints for TO-220 packages. Cross-reference manufacturer documentation for any recent design changes or lifecycle status updates before finalizing procurement plans.
Selection Notes
Select this component for designs requiring high voltage isolation and moderate current handling in through-hole configurations. Evaluate thermal management requirements based on the 208W dissipation rating. Compare gate charge specifications against driver capabilities to optimize switching losses in the target application circuit.
Part Context
This part belongs to onsemi's SuperFET II family, which integrates advanced trench gate and field plate technologies. These devices are engineered to reduce switching losses and improve efficiency in power conversion systems. The TO-220 package provides reliable mechanical stability and heat dissipation for industrial environments.
Replacement Considerations
Check for direct substitutes within the SuperFET II lineup that match the 600V rating and TO-220 form factor. Verify equivalent Rds(on) and Qg values to ensure minimal impact on circuit performance during replacement.
