FCP20N60_F080

Description：MOSFET N-CH 600V 20A TO220-3
Series：SuperFET™
Mfr：onsemi
Package：Tube

SKU:491b13a2b99c Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 20A TO220-3
Series：SuperFET™
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：98 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：3080 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：208W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

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FCP20N60_F080

Overview

The onsemi FCP20N60_F080 is an N-channel enhancement mode MOSFET belonging to the SuperFET II series. It features a maximum drain-source voltage of 600 V and a continuous drain current of 20 A. The device utilizes a TO-220 package for through-hole mounting with three pins. Key electrical parameters include a maximum drain-source resistance of 0.19 Ω, typical gate charge of 63 nC at specified Vgs, and maximum power dissipation of 208 W. Operating temperature ranges from -55°C to +150°C, with a maximum gate-source voltage of 30 V.

Feature Summary

SuperFET II technology integration for optimized high-voltage performance
Enhanced N-channel construction for efficient switching applications
Robust thermal design supporting high power dissipation in TO-220 packages

Applications

High voltage power supply circuits
Industrial motor control systems
General purpose switching applications

Procurement Notes

Verify the specific suffix _F080 against official datasheets to confirm packaging or tape-and-reel specifications. Ensure compatibility with required thermal management solutions given the 208 W dissipation rating. Cross-reference pinout configurations for TO-220 installations to prevent circuit errors during assembly.

Selection Notes

Select this component for designs requiring 600 V blocking capability and moderate current handling up to 20 A. Consider the 0.19 Ω Rds(on) for conduction loss calculations. Evaluate thermal resistance requirements for the TO-220 package under expected load conditions. Confirm gate drive voltage compatibility with the 30 V maximum limit.

Part Context

This part belongs to onsemi's SuperFET II family, which combines trench gate and field plate technologies. These devices are designed for high-efficiency power conversion. The FCP20N60 variant specifically targets applications needing reliable high-voltage switching with improved figure-of-merit characteristics compared to standard planar MOSFETs.