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Product Detailed Parameters
- Description：MOSFET N-CH 600V 20A TO220-3
- Series：SuperFET™
- Mfr：onsemi
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：190mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：98 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：3080 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：208W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The FCP20N60_G is a single N-channel Power MOSFET from onsemi's SuperFET family, designed for high-voltage switching applications. It features a 600V drain-source breakdown voltage and a continuous drain current of 20A at 25°C. The device exhibits a maximum on-resistance of 190mΩ at VGS=10V. It utilizes a TO-3P (TO-247) through-hole package with a thermal resistance of 0.65°C/W junction-to-case. The component operates within a temperature range of -55°C to +150°C and includes an integrated body diode.
Feature Summary
- SuperFET technology optimizes the trade-off between conduction losses and switching performance.
- High avalanche energy capability ensures robustness against inductive load switching events.
- Integrated fast recovery body diode minimizes reverse recovery charge effects.
Applications
- High-frequency DC-DC converters
- Power factor correction circuits
- Motor control systems
Procurement Notes
Verify the specific suffix G indicates RoHS compliance and halogen-free status as per manufacturer standards. Confirm the package variant matches the required thermal management design. Ensure ordering documentation references the correct datasheet revision for accurate electrical parameter validation before integration into production.
Selection Notes
Select this component when designing circuits requiring 600V blocking capability with moderate current handling. The low gate charge supports efficient drive requirements in hard-switching topologies. Evaluate thermal dissipation needs based on the specified power dissipation limits and case temperature constraints during operation.
Part Context
This part belongs to the SuperFET series, which integrates advanced trench gate technology with optimized cell layout. It targets efficiency improvements in offline power supplies and industrial motor drives compared to standard planar MOSFETs. The TO-3P package provides superior heat sinking capabilities for high-power density designs.
Replacement Considerations
Direct replacements include FCP16N60 or FCB20N60TM, provided pinout compatibility and thermal interface requirements are met. Verify that substitute devices maintain equivalent avalanche ratings and gate threshold voltages to ensure circuit stability without redesign.
