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Product Detailed Parameters
- Description：N-CHANNEL, MOSFET
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The FCP21N60N is a 600V N-Channel Power MOSFET from Fairchild Semiconductor's SuperFET family. It utilizes an advanced charge balance mechanism to achieve low on-resistance and reduced gate charge. Key electrical parameters include a drain-source voltage (Vdss) of 600V, a continuous drain current (Id) of 21A at 25°C, and a typical Rds(on) of 0.15Ω at Vgs=10V. The device features a typical gate charge (Qg) of 75nC and an effective output capacitance (Coss.eff) of 165pF. It is rated for operation up to 150°C junction temperature and includes 100% avalanche testing.
Feature Summary
- SuperFET technology employing an advanced charge balance mechanism for optimized performance
- Tailored to minimize conduction loss and provide superior switching performance
- Capable of withstanding extreme dv/dt rates and higher avalanche energy
- Designed for system miniaturization and higher efficiency in switching mode operations
Applications
- AC/DC power conversion
- Switching mode power supplies
- High efficiency power systems
Procurement Notes
Verify the specific manufacturer status as Fairchild Semiconductor has been acquired by ON Semiconductor. Confirm whether the part number refers to legacy Fairchild stock or current ON Semiconductor production. Check datasheet revision dates to ensure compatibility with current design requirements. Validate package type and pinout consistency if sourcing from alternative distributors.
Selection Notes
Select this component for applications requiring high voltage handling with low conduction losses. The low gate charge supports efficient driving in high-frequency switching environments. Ensure thermal management aligns with the TO-220-3 package capabilities. Verify that the 600V rating exceeds the maximum circuit voltage spikes. Consider the avalanche energy rating for robustness against transient events.
Part Context
This device belongs to the SuperFET family, representing a generation of high-voltage MOSFETs designed for improved efficiency. The series focuses on reducing both conduction and switching losses through proprietary charge balance technology. It targets modern power supply designs where size and thermal performance are critical constraints.
Replacement Considerations
Check for equivalents within the SuperFET II series such as FCP20N60 or FCP380N60E, ensuring voltage and current ratings match. Verify pinout compatibility for direct replacement in existing PCB layouts. Confirm that the replacement device meets the same avalanche testing standards.
