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Product Detailed Parameters
- Description：MOSFET N-CH 600V 22A TO220-3
- Series：SupreMOS™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：165mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
- Vgs (Max)：±45V
- Input Capacitance (Ciss) (Max) @ Vds：1950 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：205W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The FCP22N60N is a single N-channel power MOSFET from onsemi's SupreMOS family, designed for high-voltage switching applications. It features a 600V drain-source breakdown voltage and supports a continuous drain current of 22A. The device utilizes a TO-220-3 through-hole package with a maximum power dissipation of 39W. Key electrical characteristics include a typical on-resistance of 140mΩ at VGS=10V, a gate charge of 45nC, and an operating temperature range from -55°C to +150°C.
Feature Summary
- High-voltage capability optimized for robust performance in demanding power environments
- Low on-resistance design to minimize conduction losses during operation
- Enhanced thermal stability suitable for high-temperature industrial applications
Applications
- High-frequency switch-mode power supplies
- DC-DC converter circuits
- Motor control systems
Procurement Notes
Verify the specific suffix (e.g., NT) against the datasheet to confirm packaging and compliance details. Confirm availability status as distribution channels may vary. Ensure the procurement source provides valid RoHS and REACH documentation. Cross-reference the manufacturer part number with official onsemi catalogs to avoid counterfeit components.
Selection Notes
Select this component when a 600V rating and 22A continuous current are required in a through-hole format. Compare the 140mΩ on-resistance against alternative packages for thermal management needs. Evaluate the gate charge requirements against the driving circuit capabilities. Consider the TO-220-3 footprint constraints within the target PCB layout.
Part Context
This device belongs to the SupreMOS series, which integrates advanced trench technology for improved efficiency. It serves as a discrete solution for medium-power conversion tasks. The component is distinct from SuperFET variants, offering specific trade-offs between switching speed and ruggedness for general-purpose high-voltage switching.
Replacement Considerations
Check for direct pin-compatible alternatives such as the FCP20N60N or FCA20N60F if current ratings allow. Verify that substitute parts meet the same 600V and thermal specifications. Consult the manufacturer's obsolescence notices for long-term supply chain planning.
