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The FCP25N60N is an N-Channel SupreMOS MOSFET with a 600V drain-source voltage and a continuous drain current of 25A at case temperature. It features a maximum on-resistance of 125mΩ at 10V gate drive. The device utilizes advanced trench technology to achieve low switching losses and high efficiency in power conversion applications.
Verify the manufacturer origin, as Fairchild Semiconductor's discrete product portfolio has been acquired by onsemi. Ensure the component matches the specific package type and electrical ratings required for your design. Confirm availability through authorized distributors or onsemi channels.
Select this component for designs requiring a 600V rating with moderate current handling capabilities. Compare its on-resistance and switching speed against alternatives like the FCB36N60N if higher current is needed. Ensure thermal management supports the specified power dissipation limits.
This part belongs to the SupreMOS family, known for combining low Rds(on) with fast switching speeds. It is designed for general-purpose power switching applications where efficiency and reliability are critical. The TO-220 package facilitates easy mounting for heat dissipation.