FCP25N60N-F102

$2.09

Description：MOSFET N-CH 600V 25A TO220-3
Series：SupreMOS™
Mfr：onsemi
Package：Tube,Tube

SKU:0b7dc536c605 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 25A TO220-3
Series：SupreMOS™
Mfr：onsemi
Package：Tube,Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：125mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：74 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：3352 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：216W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

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FCP25N60N-F102

Overview

The FCP25N60N-F102 is a single N-channel power MOSFET manufactured by onsemi, utilizing Silicon technology. It features a TO-220-3 through-hole package and operates within a temperature range of -55°C to +150°C. Key electrical parameters include a Drain-Source Breakdown Voltage (Vds) of 600 V, a Continuous Drain Current (Id) of 25 A, and a maximum Gate-Source Voltage (Vgs) of 30 V. The device exhibits a typical Drain-Source On-Resistance (Rds(on)) of 107 mOhms at specified conditions, with a Gate Charge (Qg) of 74 nC and a Gate-Source Threshold Voltage (Vgs(th)) of 2 V.

Feature Summary

High-voltage capability optimized for robust performance in demanding switching applications
Low on-resistance design to minimize conduction losses during operation
Controlled gate charge characteristics to support efficient switching transitions

Applications

High-frequency switch-mode power supplies
Industrial motor control systems
DC-to-AC inverters

Procurement Notes

This component is officially designated as End-of-Life (EOL) by the manufacturer. Production has ceased, and no new units are available from authorized channels. Procurement efforts should focus exclusively on verifying the authenticity of existing surplus stock or identifying qualified replacement parts that meet equivalent technical specifications. Direct ordering from the manufacturer is not possible.

Selection Notes

Designers requiring this specific voltage and current rating must evaluate alternative components due to the EOL status. Selection criteria should prioritize matching the 600V breakdown voltage, 25A current capacity, and TO-220-3 form factor. Verify that substitute devices offer comparable Rds(on) and thermal resistance values to ensure circuit performance remains within original design limits without modification.

Part Context

The FCP25N60N-F102 belongs to the SuperFET family of power MOSFETs from onsemi, formerly Fairchild Semiconductor. This series integrates advanced superjunction technology to achieve superior figure-of-merit compared to traditional planar MOSFETs. The part represents a legacy solution widely used in mid-power industrial and consumer electronics before being superseded by newer generations with enhanced efficiency metrics.

Replacement Considerations

FCP125N65S3 is listed as a similar available alternative from onsemi. Engineers must verify pin compatibility and electrical parameter alignment before substitution.