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Product Detailed Parameters
- Description：MOSFET N-CH 650V 12A TO220-3
- Series：SuperFET® III
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：260mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs：24 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1010 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：90W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The onsemi FCP260N65S3 is an N-channel power MOSFET belonging to the SUPERFET III series. It features a maximum drain-source voltage (Vds) of 650 V and a continuous drain current (Id) of 12 A. The device exhibits a maximum on-resistance (Rds(on)) of 260 mΩ at a gate-source voltage of 10 V. It operates within a temperature range of -55°C to +150°C, with a typical gate charge of 24 nC. The component is housed in a TO-220 package for through-hole mounting.
Feature Summary
- Utilizes SUPERFET III technology for optimized high-voltage performance
- Designed for efficient switching in hard-switching applications
- Provides robust thermal stability across extended operating temperatures
Applications
- High-frequency power supplies
- Motor control systems
- Industrial inverters
Procurement Notes
Verify the specific ordering suffix against official datasheets to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer. Ensure the procurement channel provides valid traceability documentation for quality assurance purposes.
Selection Notes
Select this component when a 650 V rating and moderate current handling are required in a through-hole format. Compare Rds(on) and gate charge values against alternative packages like TO-247 for improved thermal dissipation needs. Evaluate the trade-off between conduction losses and switching speed relative to the application's frequency requirements.
Part Context
This part belongs to the SUPERFET III family, which integrates advanced trench gate and field plate technologies. These features reduce switching losses and improve ruggedness compared to previous generations. The series targets cost-sensitive, high-volume industrial and consumer power conversion markets requiring reliable high-voltage switching.
Replacement Considerations
Direct pin-compatible substitutes include the FCP250N65S3L1-F154 and FCP165N65S3 from the same manufacturer. Verify that the replacement maintains identical voltage ratings and acceptable Rds(on) tolerances to ensure circuit compatibility without redesign.
