ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 650V 10A TO220-3
- Series：SuperFET® III
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：360mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：730 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：83W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
Download product information
Overview
The FCP360N65S3R0 is a single N-channel power MOSFET from the onsemi SUPERFET III series, utilizing silicon technology. It features a 650V drain-source voltage rating and a maximum continuous drain current of 10A at 25°C. The device offers a typical on-resistance of 360 mΩ and a gate charge of 18 nC. Packaged in a TO-220 format for surface mount or through-hole installation, it supports a junction temperature range from -55°C to +150°C with a power dissipation capacity of 83W.
Feature Summary
- SUPERFET III architecture provides low on-resistance and fast switching performance.
- High dv/dt capability ensures stable operation during rapid voltage transitions.
- 100% avalanche tested for enhanced reliability under extreme conditions.
Applications
- Telecommunications and server power supplies
- Industrial power systems
- Uninterruptible power supply (UPS) units
- Solar energy conversion systems
Procurement Notes
Verify the specific package variant and suffix against official datasheets before ordering. Confirm RoHS compliance status and REACH SVHC declarations for regulatory adherence. Ensure thermal management requirements align with the specified power dissipation limits. Check for AEC-Q101 certification if automotive qualification is required.
Selection Notes
Select this component for applications requiring high voltage isolation and efficient power conversion. Consider the 360 mΩ on-resistance for minimizing conduction losses. Evaluate the 18 nC gate charge for driver compatibility and switching speed requirements. Ensure the TO-220 package fits the available PCB space and thermal constraints.
Part Context
This part belongs to the SUPERFET III family, designed for high-efficiency power applications. It shares core technological attributes with other members like NVD360N65S3 but differs in packaging and specific electrical tolerances. The series emphasizes low figure-of-merit values for improved system efficiency.
Replacement Considerations
Direct substitutes include NTD360N65S3H and NTPF360N65S3H within the same manufacturer lineup. Verify pinout compatibility and thermal resistance differences when replacing across different package types such as TO-252 or TO-220.
