FCP36N60N

$6.21

Description：MOSFET N-CH 600V 36A TO220-3
Series：SupreMOS™
Mfr：onsemi
Package：Tube,Tube

SKU:cbb106d217c7 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 36A TO220-3
Series：SupreMOS™
Mfr：onsemi
Package：Tube,Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：90mOhm @ 18A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：112 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：4785 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：312W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

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FCP36N60N

Overview

The FCP36N60N is a single N-channel enhancement mode MOSFET from the SupreMOS family, manufactured by onsemi. It features a 600V drain-source breakdown voltage and supports a continuous drain current of 36A at case temperature. The device exhibits a maximum on-resistance of 90 mΩ at 10V gate drive. It operates within a junction temperature range of -55°C to +150°C and dissipates up to 312W of power. Key electrical characteristics include a gate threshold voltage of 4V, a gate charge of 86nC, and a forward transconductance minimum of 41S. The component utilizes a TO-220-3 through-hole package.

Feature Summary

High-voltage capability with 600V drain-source breakdown rating for robust operation in demanding environments.
Low conduction losses achieved through optimized SupreMOS technology yielding minimal on-resistance.
Enhanced thermal performance supporting high power dissipation suitable for through-hole mounting applications.

Applications

Industrial motor control systems
High-frequency switching power supplies
DC-DC converter circuits

Procurement Notes

Verify component authenticity and datasheet alignment before integration. Confirm that the specific revision matches design requirements. Check for end-of-life status or obsolescence notices from the manufacturer. Ensure compliance with relevant environmental directives such as RoHS and REACH for the target market. Validate package dimensions against PCB footprint specifications.

Selection Notes

Select this component when high voltage isolation and substantial current handling are required in a standard through-hole format. Consider the trade-off between low on-resistance and gate charge for switching efficiency. Evaluate thermal management solutions given the high power dissipation rating. Compare against alternative packages if board space constraints exist.

Part Context

This part belongs to the FCP series of N-channel MOSFETs designed for general-purpose power switching. The SupreMOS branding indicates advanced process technology focused on reducing figure-of-merit parameters. It serves as a discrete solution for medium-to-high power applications where reliability and thermal stability are critical.