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Product Detailed Parameters
- Description：MOSFET N-CH 600V 10.2A TO220-3
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：10.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：380mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1770 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：106W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The onsemi FCP380N60E is a single N-channel enhancement-mode MOSFET belonging to the SuperFET II series. It features a 600V drain-source voltage rating and a continuous drain current of 10.2A at case temperature of 25°C. The device exhibits a maximum on-resistance of 380mΩ at Vgs=10V and Id=5A, with a typical gate charge of 45nC. Designed for through-hole mounting in TO-220-3 packages, it supports operating temperatures from -55°C to +150°C and offers a power dissipation capacity of 106W.
Feature Summary
- SuperFET II superjunction technology providing low on-resistance and gate charge for reduced conduction losses
- High avalanche energy capability supporting extreme dv/dt rates and robust switching performance
- Enhanced thermal stability with extended junction temperature range up to 150°C
Applications
- High-frequency switch-mode power supplies
- Industrial motor control systems
- General-purpose power switching applications
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer part number FCP380N60E with official onsemi documentation. Confirm package type matches TO-220-3 specifications and check RoHS compliance status via provided datasheets. Ensure ordering suffixes align with specific packaging requirements as defined in the manufacturer's catalog.
Selection Notes
Select this component for designs requiring high-voltage isolation with moderate current handling capabilities. The 380mΩ on-resistance balances efficiency and cost for non-automotive industrial applications. Verify thermal management solutions accommodate the 106W dissipation rating under expected load conditions and ambient temperatures.
Part Context
This device is part of the SuperFET II family, utilizing charge balance technology to optimize performance. It represents an evolution in high-voltage silicon MOSFETs, offering improved switching characteristics compared to standard planar technologies while maintaining compatibility with traditional through-hole assembly processes.
Replacement Considerations
Direct substitutes within the same series include FCP20N60 and FCP190N60E, though these offer different current ratings and on-resistance values. Verify pinout compatibility and thermal characteristics when considering alternative part numbers from the same manufacturer or other vendors.
