FCP4N60

$2.50

Description：MOSFET N-CH 600V 3.9A TO220-3
Series：SuperFET™
Mfr：onsemi
Package：Tube

SKU:318940c55651 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 3.9A TO220-3
Series：SuperFET™
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.2Ohm @ 2A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16.6 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：540 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：50W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

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FCP4N60

Overview

The FCP4N60 is an N-Channel SuperFET II MOSFET from onsemi, designed for high-voltage applications. It features a 600V drain-source voltage rating and a continuous drain current of 3.9A at case temperature. The device offers a maximum on-resistance of 50W power dissipation capability in a TO-220-3 through-hole package. Operating temperatures range from -55°C to +150°C.

Feature Summary

SuperFET II technology reduces voltage spikes and overshoot
Lower junction capacitance and reverse recovery charge
Enhanced design reliability for high-voltage switching

Applications

High-voltage power switching circuits
Industrial motor control systems
Power supply designs requiring low capacitance

Procurement Notes

Verify component status as the FCP4N60 is listed as obsolete and discontinued by the manufacturer. Confirm availability of substitute parts such as the MFR Recommended FDS3590 if sourcing new production units is required. Ensure datasheet specifications match application requirements before procurement.

Selection Notes

Select this component for applications requiring robust high-voltage performance with reduced switching losses. Consider the TO-220-3 package for through-hole mounting needs. Evaluate thermal management capabilities given the 50W power dissipation rating and operating temperature limits.

Part Context

Part of the SuperFET II family focusing on reliability and efficiency. Designed to minimize electromagnetic interference through lower capacitance characteristics. Suitable for demanding industrial environments where voltage stability is critical.

Replacement Considerations

The FDS3590 is listed as a manufacturer-recommended substitute. Verify electrical parameters and pin compatibility before substitution due to the original part's obsolete status.