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Product Detailed Parameters
- Description：SUPERFET2 800V 650MOHM ZENER
- Series：*
- Mfr：Fairchild/ON Semiconductor
- Package：Tube
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The FCP650N80Z is an N-channel SuperFET II MOSFET manufactured by onsemi, formerly Fairchild Semiconductor. It features a drain-source voltage (VDSS) of 800V and a continuous drain current (ID) of 10A at 25°C, reducing to 6.3A at 100°C case temperature. The device exhibits a typical on-resistance (RDS(on)) of 530 mΩ and a gate charge (Qg) of 27 nC. It operates within a junction temperature range of -55°C to +150°C and is housed in a TO-220-3 package.
Feature Summary
- SuperFET II technology integrates the power MOSFET with a fast-recovery body diode for optimized high-voltage performance.
- Low effective output capacitance and low stored charge reduce switching energy losses during operation.
- Enhanced electrostatic discharge (ESD) capability allows the device to withstand high HBM stress levels.
Applications
- AC-DC power supplies
- LED lighting drivers
- Notebook adapters
- Industrial power applications
Procurement Notes
Verify component authenticity through authorized distribution channels due to potential obsolescence risks associated with legacy Fairchild part numbers. Confirm that the specific ordering suffix matches the required RoHS compliance and packaging format. Request recent lot traceability data to ensure material consistency. Validate that the supplier provides original manufacturer documentation rather than third-party copies. Check for any pending production discontinuation notices from onsemi before finalizing procurement plans.
Selection Notes
Select this component for designs requiring high blocking voltage and efficient switching in isolated power conversion topologies. The integrated fast recovery diode eliminates the need for external snubbers or parallel diodes in many bridge configurations. Ensure the thermal management solution supports the specified power dissipation limits under worst-case operating conditions. Verify that the gate drive circuitry can handle the low gate charge requirements for optimal efficiency.
Part Context
This device belongs to the SuperFET II family, which combines trench MOSFET technology with a monolithic fast recovery diode. Originally developed by Fairchild Semiconductor, the product line was transferred to onsemi following corporate acquisition. The numbering convention reflects the original Fairchild designation structure, now maintained by onsemi for backward compatibility in existing designs.
Replacement Considerations
Consult official onsemi substitution guides for equivalent SuperFET II devices with matching voltage and current ratings. Verify pinout compatibility and thermal characteristics when considering alternative packages. Cross-reference datasheets to confirm identical electrical parameters and switching behavior.
