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Product Detailed Parameters
- Description：MOSFET N-CH 600V 7A TO220-3
- Series：SuperFET™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：600mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：920 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：83W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The FCP7N60_F080 is a single N-channel power MOSFET from onsemi's SuperFET series, designed for high-voltage switching applications. It features a 600V drain-source breakdown voltage and supports a continuous drain current of 7A. The device utilizes a TO-220-3 through-hole package with a tab mount configuration. Key electrical characteristics include a maximum gate-source voltage of ±30V and a typical gate charge of 30nC. The component operates within a temperature range of -55°C to +150°C and offers a power dissipation capability of 83W.
Feature Summary
- SuperFET technology integration for optimized switching performance
- High voltage rating suitable for robust power circuit designs
- Through-hole mounting for secure mechanical attachment
Applications
- General purpose power switching circuits
- DC-DC converter topologies
- Motor control systems
Procurement Notes
Verify the specific suffix _F080 against official datasheets to confirm packaging details and reel specifications. Ensure compatibility with existing thermal management solutions given the TO-220-3 form factor. Cross-reference manufacturer documentation for any updates regarding lead-free compliance or RoHS status prior to final procurement decisions.
Selection Notes
Select this component when a 600V rating and 7A continuous current capacity are required in a through-hole package. Consider the 530mΩ on-resistance for efficiency calculations in low-to-medium power applications. Evaluate thermal requirements based on the 83W dissipation limit and ensure adequate heatsinking for sustained operation.
Part Context
This part belongs to onsemi's SuperFET family, which combines trench gate technology with advanced process improvements. The FCP7N60 series is engineered to provide improved figure-of-merit compared to standard planar MOSFETs. It serves as a reliable solution for general-purpose power electronics where high voltage blocking and moderate current handling are essential.
Replacement Considerations
Direct substitutes may include other 600V N-channel MOSFETs in TO-220 packages with similar current ratings. Verify pinout compatibility and thermal resistance values before substitution. Check for equivalent gate charge and threshold voltage specifications to ensure circuit stability.
