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Product Detailed Parameters
- Description：MOSFET N-CH 600V 9A TO220-3
- Series：SuperMOS™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：385mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：29 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1240 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：83.3W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The FCP9N60N is a single N-channel Power MOSFET from the onsemi SupreMOS family, designed for high-voltage switching applications. It features a 600V drain-source breakdown voltage and supports a continuous drain current of 5.7A. The device exhibits a maximum on-resistance of 330 mOhms at Vgs=10V. Key electrical characteristics include a gate charge of 29 nC, a threshold voltage of 2V, and a power dissipation rating of 83.3W. It operates within a temperature range of -55°C to +150°C and utilizes a TO-220-3 through-hole package.
Feature Summary
- SupreMOS technology optimized for low conduction losses and fast switching performance
- High avalanche energy capability for robust operation in inductive load environments
- Enhanced thermal stability with a maximum junction temperature rating of 150°C
Applications
- High-frequency switch-mode power supplies
- Motor control circuits
- DC-DC converter topologies
Procurement Notes
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm RoHS compliance status via the supplier's declaration documents. Ensure the TO-220-3 package matches design requirements. Validate that the specific lot date code meets project lifecycle constraints given the component's availability status.
Selection Notes
Select this component when a 600V rated N-channel MOSFET with moderate current handling is required. The 330 mOhm on-resistance offers a balance between conduction loss and cost. Consider the TO-220-3 package for through-hole mounting solutions where board space allows. Evaluate thermal management needs based on the 83.3W power dissipation rating under specific operating conditions.
Part Context
This part belongs to the onsemi SupreMOS series, which integrates advanced trench gate technology. The series targets efficient power conversion in industrial and consumer electronics. The FCP9N60N specifically addresses applications requiring reliable high-voltage switching with improved efficiency compared to standard planar technologies.
Replacement Considerations
Check for direct pin-compatible alternatives within the same voltage and current class. Verify that any substitute maintains or improves upon the 330 mOhm Rds(on) specification. Ensure the replacement package matches the TO-220-3 form factor for mechanical compatibility.
