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Product Detailed Parameters
- Description：MOSFET N-CH 650V 44A TO220F
- Series：SuperFET® III
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：67mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 4.4mA
- Gate Charge (Qg) (Max) @ Vgs：78 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：3090 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：46W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF067N65S3 is an N-channel enhancement-mode MOSFET from the SuperFET III series by onsemi. It features a 650 V drain-source voltage rating and a maximum continuous drain current of 44 A. The device exhibits a low on-resistance of 67 mΩ at room temperature, with a typical gate charge of 78 nC. It operates within a temperature range of -55°C to +150°C and dissipates up to 46 W of power. Packaged in a TO-220-3 through-hole format, it includes a built-in body diode with a forward voltage of 1.2 V.
Feature Summary
- Integrates SuperFET III technology for optimized switching performance and reduced conduction losses.
- Features a built-in fast body diode suitable for hard-switching applications.
- Designed for high-voltage power conversion with enhanced avalanche ruggedness.
Applications
- High-frequency power supplies
- Industrial motor drives
- Uninterruptible power systems
Procurement Notes
Verify the specific suffix S3 against the manufacturer datasheet to confirm pinout and thermal characteristics. Ensure the TO-220-3 package matches the target PCB footprint. Check RoHS compliance status via official documentation before integration. Confirm operating temperature limits align with system thermal design requirements.
Selection Notes
Select this component for designs requiring high voltage isolation and moderate current handling in through-hole assemblies. Compare the 67 mΩ on-resistance against alternative packages like TO-247 for thermal management needs. Evaluate gate charge specifications relative to driver capabilities to optimize switching efficiency.
Part Context
This part belongs to the FCPF series, representing onsemi's third-generation SuperFET technology. It targets high-efficiency power electronics where size and switching speed are critical. The TO-220 package provides a balance between thermal dissipation and mounting flexibility for industrial equipment.
Replacement Considerations
Consider the FCPF099N65S3 for lower current requirements or the NTHL067N65S3H for higher power dissipation in a TO-247 package. Verify electrical parameters match before substitution.
