FCPF099N65S3

Overview

The FCPF099N65S3 is an N-channel SuperFET III MOSFET from onsemi, utilizing charge balance technology for high-voltage superjunction performance. It features a maximum drain-source voltage (V_DSS) of 650 V and a typical R_DS(on) of 85 mΩ at V_GS = 10 V, with a maximum limit of 99 mΩ. The device supports a continuous drain current (I_D) of 30 A at T_C = 25°C and 19 A at T_C = 100°C, alongside a pulse current capability of 75 A. Key electrical parameters include a typical gate charge (Q_g) of 57 nC and an effective output capacitance (C_oss(eff.)) of 517 pF. It operates within a junction temperature range up to 150°C.

Feature Summary

• Employs charge balance technology to achieve low conduction losses and superior switching performance.
• Capable of withstanding extremely high dv/dt rates for robust operation in demanding environments.
• Designed as an easy-to-drive series to assist in mitigating electromagnetic interference (EMI).
• Undergoes 100% avalanche testing to ensure reliability under extreme conditions.

Applications

• Telecommunications and server power supplies requiring high efficiency.
• Industrial power systems needing high voltage tolerance and reliability.
• Uninterruptible Power Supply (UPS) and solar energy conversion systems.

Procurement Notes

Verify the specific datasheet revision and ordering suffix when sourcing components. Confirm that the received parts match the exact part number FCPF099N65S3 to ensure correct electrical characteristics. Check for RoHS compliance documentation if environmental standards are required for your assembly process. Ensure storage conditions adhere to manufacturer guidelines to maintain device integrity prior to use.

Selection Notes

Select this component for designs prioritizing low R_DS(on) combined with fast switching speeds in high-voltage applications. The SuperFET III architecture offers a balance between conduction loss reduction and EMI management. Consider the thermal performance requirements, as the device supports significant current handling at elevated temperatures. Evaluate the gate charge specifications against your driver capabilities to optimize switching transitions effectively.

Part Context

This device belongs to the SuperFET III family, representing onsemi's high-voltage superjunction MOSFET portfolio. The series integrates advanced charge balance techniques to outperform traditional planar technologies. It targets applications where efficiency, thermal management, and switching speed are critical constraints. The product line emphasizes ease of design implementation through optimized drive requirements.

FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (V_DSS) is rated at 650 V.

Does the device undergo reliability testing?

Yes, the FCPF099N65S3 undergoes 100% avalanche testing to ensure reliability under extreme conditions.