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Product Detailed Parameters
- Description：POWER FIELD-EFFECT TRANSISTOR, 1
- Series：SuperMOS™
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：10.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：299mOhm @ 5.4A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：35.6 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1505 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：32.1W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF11N60NT is an N-channel enhancement mode MOSFET from the SupreMOS series, manufactured by Fairchild Semiconductor. It features a maximum drain-source voltage of 600 V and a continuous drain current of 11 A at case temperature. The device utilizes a TO-220F package for through-hole mounting. Key electrical parameters include a maximum on-resistance of 380 mΩ at 10 V gate drive, a typical gate charge of 40 nC, and a power dissipation rating of 36 W. It operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- SupreMOS technology designed for high-efficiency switching applications
- Enhanced low on-resistance characteristics for reduced conduction losses
- Robust avalanche energy capability for improved reliability
Applications
- High-frequency switch-mode power supplies
- Motor control circuits
- DC-DC converters
Procurement Notes
Verify the manufacturer origin carefully as Fairchild's semiconductor division was acquired by onsemi. Confirm the specific suffix 'NT' matches your bill of materials requirements. Check component status as older Fairchild SKUs may be discontinued or superseded by newer equivalents. Ensure the TO-220F package variant aligns with your PCB footprint design constraints.
Selection Notes
Select this component when a 600 V rated N-channel MOSFET with moderate current handling is required in a through-hole package. Compare the 380 mΩ on-resistance against thermal management capabilities in your specific application. Consider the 40 nC gate charge for driver selection and switching speed optimization relative to system efficiency targets.
Part Context
This part belongs to the Fairchild SupreMOS family, which integrates advanced trench gate technology. The FCPF11N60NT represents a mid-range current solution within the 600 V voltage class. It shares architectural similarities with other FCPF series devices but offers distinct electrical trade-offs between conduction loss and switching performance tailored for general-purpose power electronics.
Replacement Considerations
FCPF11N60 (without NT suffix) may serve as a functional equivalent if packaging variations are acceptable. Verify pinout compatibility before substitution.
