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Product Detailed Parameters
- Description：MOSFET N-CH 600V 10.8A TO220F
- Series：SuperMOS™
- Mfr：onsemi
- Package：Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：10.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：299mOhm @ 5.4A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：35.6 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1505 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：32.1W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF11N60NT is an N-channel enhancement-mode MOSFET from onsemi’s SupreMOS series, utilizing charge-balanced superjunction technology. It features a 600 V drain-source voltage rating and a continuous drain current of 10.8 A at 25°C case temperature. The device exhibits a maximum on-resistance of 299 mΩ and a typical gate charge of 27.4 nC at 10 V. Packaged in a TO-220F (FullPak) for through-hole mounting, it supports a power dissipation of 32.1 W and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Charge-balanced superjunction technology enables low conduction losses and high avalanche energy capability.
- Optimized body diode reverse recovery characteristics reduce switching losses and system component requirements.
- High dv/dt rating ensures robust performance during fast switching transitions.
Applications
- Power factor correction circuits
- Server and telecommunications power supplies
- Flat panel television power systems
Procurement Notes
Verify the specific suffix NT against official datasheets to confirm package type and compliance status. Confirm availability as this part may be subject to obsolescence notices. Validate RoHS and REACH compliance documentation directly with the manufacturer before integration into production schedules.
Selection Notes
Select this component for applications requiring efficient high-voltage switching with moderate current demands. The TO-220F package offers thermal management suitable for through-hole designs. Ensure drive circuitry aligns with the specified gate threshold and charge requirements for optimal switching efficiency.
Part Context
This device belongs to the SupreMOS family, representing onsemi’s first generation of high-voltage superjunction MOSFETs. It succeeds earlier SuperFET variants by offering improved switching speed and reduced output capacitance while maintaining reliability through comprehensive avalanche testing protocols.
Replacement Considerations
Direct substitutes include FCP11N60F and FCPF11N60. Verify pinout compatibility and thermal resistance differences when replacing FCP11N60F due to package variations between TO-220AB and TO-220F.
