FCPF13N60NT

FCPF13N60NT

$1.48
  • Description:MOSFET N-CH 600V 13A TO220F
  • Series:SuperMOS™
  • Mfr:onsemi
  • Package:Tube,Tube

SKU:01afbd4a114c Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 600V 13A TO220F
  • Series:SuperMOS™
  • Mfr:onsemi
  • Package:Tube,Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:258mOhm @ 6.5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:39.5 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:1765 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):33.8W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220F-3
  • Package / Case:TO-220-3 Full Pack

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FCPF13N60NT

Overview

The FCPF13N60NT is a single N-channel enhancement mode MOSFET from onsemi's SupreMOS series, designed for high-voltage switching applications. It features a 600 V drain-source breakdown voltage and a continuous drain current of 13 A at 25°C case temperature. The device exhibits a maximum on-resistance of 400 mΩ at VGS = 10 V. Packaged in a TO-220-3 through-hole configuration, it supports a power dissipation of 18 W and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

  • High-voltage capability with 600 V drain-source breakdown rating
  • Low on-resistance design for efficient power conduction
  • Enhanced avalanche ruggedness for robust operation
  • Through-hole mounting for reliable thermal management

Applications

  • High-frequency switch-mode power supplies
  • Industrial motor control circuits
  • DC-to-AC inverters
  • Uninterruptible power supply (UPS) systems

Procurement Notes

Verify the specific suffix 'NT' against the official datasheet to confirm packaging details, as variations may exist. Confirm RoHS compliance status directly with the manufacturer or authorized distributors. Ensure the component meets all environmental regulations required for your target market before finalizing procurement decisions.

Selection Notes

Select this component when a 600 V rating and approximately 13 A continuous current are required in a standard TO-220 package. Compare the 400 mΩ on-resistance against alternative devices to ensure optimal efficiency for the specific load conditions. Verify that the thermal resistance characteristics align with the available heatsinking infrastructure in the design.

Part Context

This part belongs to the SupreMOS family, which integrates advanced trench gate technology to minimize conduction losses while maintaining high reliability. The FCPF13N60NT serves as a medium-power solution within the broader portfolio of high-voltage silicon MOSFETs offered by onsemi for industrial and consumer electronics.

Replacement Considerations

Direct substitutes include FCP13N60N and FDP13N60N. Verify pinout compatibility and thermal performance metrics before substitution.

FCPF13N60NTFCPF13N60NT
$1.48
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