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The FCPF13N60NT is a single N-channel enhancement mode MOSFET from onsemi's SupreMOS series, designed for high-voltage switching applications. It features a 600 V drain-source breakdown voltage and a continuous drain current of 13 A at 25°C case temperature. The device exhibits a maximum on-resistance of 400 mΩ at VGS = 10 V. Packaged in a TO-220-3 through-hole configuration, it supports a power dissipation of 18 W and operates within a junction temperature range of -55°C to +150°C.
Verify the specific suffix 'NT' against the official datasheet to confirm packaging details, as variations may exist. Confirm RoHS compliance status directly with the manufacturer or authorized distributors. Ensure the component meets all environmental regulations required for your target market before finalizing procurement decisions.
Select this component when a 600 V rating and approximately 13 A continuous current are required in a standard TO-220 package. Compare the 400 mΩ on-resistance against alternative devices to ensure optimal efficiency for the specific load conditions. Verify that the thermal resistance characteristics align with the available heatsinking infrastructure in the design.
This part belongs to the SupreMOS family, which integrates advanced trench gate technology to minimize conduction losses while maintaining high reliability. The FCPF13N60NT serves as a medium-power solution within the broader portfolio of high-voltage silicon MOSFETs offered by onsemi for industrial and consumer electronics.
Direct substitutes include FCP13N60N and FDP13N60N. Verify pinout compatibility and thermal performance metrics before substitution.