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Product Detailed Parameters
- Description：MOSFET N-CH 600V TO-220-3
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：20.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：190mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：82 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：3175 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：39W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF190N60E-F152 is an N-channel enhancement mode MOSFET from the SuperFET II series, manufactured by onsemi. It features a 600V drain-source voltage rating and a continuous drain current of 20.6A. The device has a maximum on-resistance of 190mΩ at Vgs=10V and a typical gate charge of 63nC. It operates within a temperature range of -55°C to +150°C with a power dissipation of 208W in a TO-220 package.
Feature Summary
- SuperFET II technology for optimized switching performance
- Low on-resistance for reduced conduction losses
- High voltage capability suitable for industrial applications
Applications
- Industrial motor drives
- Power supplies
- Inverters
Procurement Notes
Verify the exact part number suffix against official datasheets to confirm pinout and electrical specifications. Ensure compatibility with existing thermal management designs due to the through-hole TO-220 package. Check for RoHS compliance status if required by specific regional regulations or end-product standards before finalizing procurement decisions.
Selection Notes
Select this component for high-voltage applications requiring robust N-channel MOSFET performance. Consider the 600V rating and 20.6A current capacity when designing circuits for industrial environments. Evaluate thermal requirements based on the 208W power dissipation rating and ensure adequate heat sinking for the TO-220 package to maintain operation within the specified temperature limits.
Part Context
This component belongs to onsemi's SuperFET II family, designed for efficient power switching. It utilizes silicon technology in a standard TO-220-3 through-hole package. The device is intended for general-purpose high-voltage applications where reliable switching and low conduction losses are critical for system efficiency.
Replacement Considerations
FCPF190N60-F152 is a related variant but may have different electrical characteristics such as Rds(on) and Qg. Verify all parameters against the datasheet before substitution. No other direct substitutes are confirmed in public documentation.
