FCPF190N60E-F154

$3.40

Description：MOSFET N-CH 600V 20.6A TO220F-3
Series：SuperFET® II
Mfr：onsemi
Package：Tube

SKU:cf5e7903feb7 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 20.6A TO220F-3
Series：SuperFET® II
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：20.6A (Tj)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：82 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3175 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：39W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F-3
Package / Case：TO-220-3 Full Pack

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FCPF190N60E-F154

Overview

The FCPF190N60E-F154 is an N-Channel enhancement-mode MOSFET from the SuperFET II family, utilizing charge balance super-junction technology. It features a 600 V drain-source voltage rating and a maximum continuous drain current of 20.6 A at 25°C case temperature. The device exhibits a typical on-resistance of 160 mΩ and a total gate charge of 63 nC. It operates within a junction temperature range of -55°C to +150°C and is housed in a TO-220F package.

Feature Summary

Super-junction architecture with charge balance technology for low conduction loss
Optimized switching performance with ultra-low gate charge
High avalanche energy capability and extreme dv/dt rate withstand
EMI management support through easy drive series characteristics

Applications

Computing and display power supplies
Telecom and server power supplies
Industrial power supplies
Lighting, chargers, and adapters

Procurement Notes

Verify the specific ordering suffix F154 against official documentation to confirm tube packaging details. Ensure compatibility with TO-220F Ultra Narrow Lead (CASE 221BN) mechanical constraints. Confirm RoHS compliance status and Pb-free designation requirements prior to procurement.

Selection Notes

Select this component for high-voltage applications requiring superior switching efficiency and low thermal resistance. Evaluate the 160 mΩ typical on-resistance against system conduction loss targets. Consider the 63 nC gate charge for driver capability assessment in high-frequency designs.

Part Context

This part belongs to the SuperFET II family, representing ON Semiconductor's high-voltage super-junction MOSFET lineup. The technology focuses on minimizing conduction losses while maintaining robust switching performance and avalanche ruggedness for reliable power conversion.