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Product Detailed Parameters
- Description：MOSFET N-CH 650V 17A TO220F-3
- Series：SuperFET® III
- Mfr：onsemi
- Package：Bulk,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：190mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 1.7mA
- Gate Charge (Qg) (Max) @ Vgs：33 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1350 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：144W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF190N65S3R0L is a single N-channel SuperFET III power MOSFET manufactured by onsemi. It features a 650V drain-source voltage rating and a maximum continuous drain current of 14A at case temperature of 25°C. The device exhibits a typical on-resistance of 190mΩ at a gate-source voltage of 10V. Key electrical parameters include a gate charge of 30nC, a threshold voltage of 2.5V, and a power dissipation capacity of 33W. It operates within a junction temperature range of -55°C to +150°C and utilizes a TO-220F package for through-hole mounting.
Feature Summary
- Integrates SuperFET III technology utilizing charge balance architecture for optimized performance.
- Provides low on-resistance combined with fast switching characteristics to minimize conduction and switching losses.
- Features enhanced dv/dt capability to withstand high transient voltage rates during operation.
Applications
- High-frequency switch-mode power supplies
- Industrial motor control systems
- Uninterruptible power supply (UPS) circuits
Procurement Notes
Verify the specific suffix R0L against official datasheets to confirm packaging configuration, as variations may exist. Confirm component availability status directly with the manufacturer or authorized distributors, as lifecycle changes can affect procurement. Ensure compliance with RoHS and REACH requirements relevant to your region before finalizing orders.
Selection Notes
Select this component when designing circuits requiring a 650V rating with moderate current handling capabilities around 14A. The TO-220F package is suitable for applications where through-hole mounting is preferred over surface mount alternatives. Evaluate thermal management requirements based on the 33W power dissipation limit and ensure adequate heat sinking for sustained operation.
Part Context
This part belongs to the SuperFET III family from onsemi, which employs advanced superjunction technology. This series is engineered to deliver superior efficiency compared to traditional planar MOSFETs by reducing both gate charge and on-resistance simultaneously. The FCPF190N65S3R0L represents a specific variant within this lineup tailored for robust high-voltage switching applications.
Replacement Considerations
Direct replacements must match the 650V rating, N-channel configuration, and TO-220F package. Verify that substitute components offer comparable on-resistance and gate charge specifications to maintain circuit efficiency and switching speed without redesigning the drive circuitry.
