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Product Detailed Parameters
- Description：MOSFET N-CH 600V 20A TO220F
- Series：SuperFET™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：190mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：98 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：3080 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：39W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF20N60 is a single N-Channel Power MOSFET from onsemi's SuperFET family, utilizing first-generation high-voltage super-junction technology. It features a 600 V drain-source voltage rating and a continuous drain current of 20 A at case temperature. The device offers a maximum on-resistance of 190 mΩ at VGS = 10 V. Packaged in a TO-220F-3 through-hole housing, it supports a power dissipation of 39 W at case temperature.
Feature Summary
- Employs first-generation super-junction charge balance technology for optimized high-voltage performance.
- Integrates Easy Drive gate architecture to facilitate efficient switching control.
- Provides enhanced ruggedness suitable for demanding power switching applications.
Applications
- High-frequency power conversion circuits
- Industrial motor drive systems
- Uninterruptible power supply (UPS) inverters
Procurement Notes
Verify the specific ordering suffix against the manufacturer datasheet to confirm exact electrical tolerances and package variations. Confirm RoHS compliance status directly with the supplier documentation. Ensure the procurement channel provides valid traceability records for this component type.
Selection Notes
Select this component when a 600 V rating and low conduction losses are required in a through-hole format. Compare the 190 mΩ on-resistance against thermal management capabilities in the target application. Evaluate the super-junction technology benefits over standard planar MOSFETs for efficiency requirements.
Part Context
This part belongs to onsemi's SuperFET series, representing an evolution in high-voltage silicon technology. It succeeds earlier planar designs by offering improved figure-of-merit characteristics. The TO-220F-3 package ensures compatibility with standard heatsinking solutions used in industrial power electronics.
Replacement Considerations
Direct substitutes include FCP20N60 and FCPF190N60. Verify pinout compatibility and ensure the replacement meets the 600 V breakdown and 190 mΩ resistance specifications. Check for any differences in gate charge or thermal resistance that may impact circuit design.
