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Product Detailed Parameters
- Description：MOSFET N-CH 600V 20A TO-220F
- Series：SuperFET™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF20N60ST is a single N-channel power MOSFET manufactured by onsemi, designed for high-voltage switching applications. It features a 600V drain-source breakdown voltage and is housed in a TO-220F-3 through-hole package. The device supports a continuous drain current of 12.5A at case temperature or 20A under specific thermal conditions. Its typical on-resistance (Rds(on)) is specified at 150 mOhms to 190 mOhms, ensuring efficient conduction. Constructed using silicon technology, this component belongs to the FRFET family, offering robust performance for industrial and consumer power supplies.
Feature Summary
- Utilizes SuperFET technology to achieve low gate charge and reduced switching losses.
- Features an enhanced body diode with fast recovery characteristics for improved efficiency in hard-switching topologies.
- Designed with a rugged avalanche rating to withstand transient energy events during operation.
Applications
- High-frequency DC-DC converters
- Power factor correction (PFC) circuits
- Industrial motor control systems
Procurement Notes
Verify availability status carefully as supply constraints may exist for this specific suffix variant. Confirm that the TO-220F-3 full pack package matches your PCB footprint requirements. Ensure thermal management solutions align with the 12.5A continuous current rating at case temperature. Cross-reference the datasheet revision to confirm parameter consistency before finalizing design specifications.
Selection Notes
Select this component when a 600V rating is required for primary-side switching or PFC applications. The TO-220F-3 package facilitates easy mounting on heatsinks for thermal dissipation. Compare Rds(on) values against alternative SuperFET generations to optimize conduction losses. Consider the gate charge specifications if driving speed is critical for the target switching frequency.
Part Context
This part is part of onsemi's SuperFET series, which integrates advanced trench gate and field plate technologies. It serves as a successor to earlier planar MOSFET designs, offering superior figure-of-merit metrics. The FCPF20N60ST specifically targets applications requiring high reliability and low electromagnetic interference (EMI) due to its soft recovery body diode characteristics.
Replacement Considerations
The FCP20N60 is a related variant within the same product family. Verify pinout compatibility and electrical parameter tolerances before substitution. Ensure the replacement package type matches the mechanical constraints of the existing assembly.
