FCPF20N60T

$2.10

Description：POWER MOSFET, N-CHANNEL, SUPERFE
Series：SuperFET™
Mfr：onsemi
Package：Tube

SKU:41a0ab6c4224 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：POWER MOSFET, N-CHANNEL, SUPERFE
Series：SuperFET™
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：98 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：3080 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：39W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F-3
Package / Case：TO-220-3 Full Pack

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FCPF20N60T

Overview

The FCPF20N60T is a single N-channel power MOSFET from onsemi's SuperFET II family, designed for high-voltage switching applications. It features a 600V drain-source voltage rating and a continuous drain current of 20A at case temperature. The device exhibits a maximum on-resistance of 200mΩ and a gate charge of 74nC. Packaged in a TO-220FP-3 through-hole housing, it supports a power dissipation of 39W and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

SuperFET II technology integrates logic-level gate drive with low on-resistance for optimized efficiency.
Enhanced dynamic performance via reduced gate charge and optimized internal capacitances.
Robust avalanche energy capability ensures reliability under transient stress conditions.

Applications

High-frequency DC-DC converters
Power factor correction circuits
Motor control systems

Procurement Notes

Verify the specific suffix 'T' confirms the rail packaging format required for your assembly line. Confirm the datasheet revision matches your design specifications, as electrical parameters may vary between updates. Ensure thermal management solutions align with the 39W dissipation rating at the intended operating ambient temperature.

Selection Notes

Select this component when a balance of low conduction losses and fast switching speeds is required in a standard through-hole package. The SuperFET II architecture offers superior performance compared to traditional planar MOSFETs in similar voltage classes. Evaluate thermal resistance values against your heatsink constraints to ensure safe operation under peak load conditions.

Part Context

This part belongs to onsemi's SuperFET II series, which combines advanced trench gate technology with integrated body diode improvements. The series targets efficient power conversion in industrial and consumer electronics. The TO-220FP-3 package provides reliable mechanical mounting and efficient heat transfer for medium-power applications.

Replacement Considerations

Direct substitutes include FCP20N60 and FCPF190N60, provided pinout compatibility and thermal characteristics are verified. Check that replacement parts maintain equivalent Vds, Id, and Rds(on) ratings to ensure circuit performance integrity without redesigning the PCB layout or cooling system.