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Product Detailed Parameters
- Description：MOSFET N-CH 600V 20A TO220F-3
- Series：SuperFET™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：190mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：98 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：3080 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：39W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3 (Y-Forming)
- Package / Case：TO-220-3 Full Pack, Formed Leads
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Overview
The FCPF20N60TYDTU is an N-channel enhancement-mode MOSFET from onsemi's SuperFET II series. It features a 600 V drain-source voltage rating and a continuous drain current of 20 A. The device utilizes a TO-220F-3 package for through-hole mounting, providing thermal isolation. Key electrical parameters include a maximum drain-source on-resistance of 190 mΩ at 10 V gate drive and a typical gate charge of 75 nC at 4.5 V. It operates within a temperature range of -55°C to +150°C with a power dissipation capacity of 208 W.
Feature Summary
- SuperFET II technology integrates logic-level gate drive with low on-resistance for improved efficiency.
- Thermally isolated TO-220F package eliminates the need for additional insulating hardware during installation.
- Enhanced avalanche ruggedness supports reliable operation under high-energy switching conditions.
Applications
- High-frequency switch-mode power supplies
- DC-DC converter circuits
- Motor control systems
Procurement Notes
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm the presence of the specific suffix indicating the Y-type lead form compatible with the TO-220F-3 package. Ensure compliance with relevant environmental standards required for the target assembly process before finalizing orders.
Selection Notes
Select this component when a thermally isolated N-channel MOSFET is required for high-voltage applications. The 600 V rating suits general-purpose industrial electronics. Evaluate the 190 mΩ on-resistance against thermal management constraints to ensure junction temperatures remain within safe operating limits during continuous load cycles.
Part Context
This part belongs to the SuperFET II family, which combines advanced trench gate technology with optimized layout for reduced switching losses. The TO-220F-3 variant provides a cost-effective solution for designs requiring galvanic isolation between the drain and heatsink without external insulators.
Replacement Considerations
Direct substitutes may include other SuperFET II devices with matching voltage and current ratings. Verify pinout compatibility and thermal resistance values before substitution. Cross-reference with onsemi documentation for equivalent performance in specific circuit topologies.
