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Product Detailed Parameters
- Description：MOSFET N-CH 800V 2.6A TO220F
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2.25Ohm @ 1.3A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 260µA
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：585 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：21.9W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF2250N80Z is an N-Channel MOSFET from onsemi's SuperFET II family, utilizing super-junction charge balance technology. It features a drain-source breakdown voltage (Vds) of 800 V and a continuous drain current (Id) of 2.6 A. The device exhibits a maximum on-resistance (Rds(on)) of 2.25 Ohms at a gate-source voltage (Vgs) of 10 V. Key electrical parameters include a gate charge (Qg) of 13 nC, a threshold voltage (Vgs(th)) of 4 V, and a forward transconductance of 1.5 S. It operates within a temperature range of -55°C to +150°C with a power dissipation of 37 W.
Feature Summary
- SuperFET II super-junction architecture for optimized low on-resistance and reduced gate charge
- Enhanced switching efficiency and ruggedness through charge balance technology
- High-voltage capability suitable for demanding power conversion applications
Applications
- High-frequency switch-mode power supplies
- Industrial motor control systems
- Uninterruptible power supply (UPS) circuits
Procurement Notes
Verify the specific suffix 'Z' against the manufacturer's latest datasheet to confirm compliance with RoHS directives and halogen-free status. Ensure the TO-220F-3 package dimensions match your thermal management design requirements. Cross-reference the part number with official onsemi distributors to avoid counterfeit components.
Selection Notes
Select this component when designing high-efficiency power stages requiring 800 V blocking capability. The low gate charge supports higher switching frequencies, reducing passive component size. Evaluate thermal performance based on the 2.25 Ohm Rds(on) under expected load conditions to ensure junction temperatures remain within safe operating limits.
Part Context
This device belongs to the FCPF series of high-voltage MOSFETs. It represents onsemi's implementation of super-junction technology in a standard through-hole package. The series targets applications where efficiency and switching speed are critical constraints in power electronics design.
Replacement Considerations
Direct substitutes must match the 800 V rating, 2.6 A current capacity, and TO-220F-3 footprint. Verify that alternative parts offer comparable Rds(on) and Qg values to maintain circuit efficiency.
