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Product Detailed Parameters
- Description：MOSFET N-CH 600V 22A TO220F
- Series：SupreMOS™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：165mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
- Vgs (Max)：±45V
- Input Capacitance (Ciss) (Max) @ Vds：1950 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：39W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF22N60NT is a single N-channel enhancement mode MOSFET from onsemi's SupreMOS series, designed for high-voltage switching applications. It features a 600 V drain-source breakdown voltage and supports a continuous drain current of 22 A. The device exhibits a maximum on-resistance of 140 mΩ at room temperature. Key electrical characteristics include a gate threshold voltage of 2 V, a total gate charge of 45 nC, and a forward transconductance of 22 S. Switching performance is defined by a typical turn-on time of 16.7 ns and a turn-off time of 4 ns. The component operates within a junction temperature range of -55 °C to +150 °C and dissipates up to 39 W of power.
Feature Summary
- Utilizes SupreMOS technology to achieve low conduction losses and optimized switching dynamics in a rugged silicon structure.
- Engineered with an enhanced body diode to support hard-switching operations and resistive load conditions effectively.
- Constructed with a leaded TO-220-3 package to facilitate efficient thermal dissipation through direct mounting surfaces.
Applications
- High-frequency AC/DC and DC/DC converter topologies
- Industrial motor control and drive systems
- Uninterruptible power supply (UPS) circuits
Procurement Notes
Verify the specific ordering suffix and manufacturing date code against official onsemi documentation prior to procurement. Confirm compliance with RoHS and REACH directives as stated in the product datasheet. Ensure that the intended application environment remains within the specified thermal and electrical limits defined in the technical specifications.
Selection Notes
Select this component when a 600 V rating and 22 A continuous current capacity are required for through-hole assembly. Evaluate the 140 mΩ on-resistance against thermal management requirements to ensure junction temperatures remain safe. Consider the 45 nC gate charge for driver capability assessment in high-speed switching environments.
Part Context
This part belongs to the FCP series of N-channel MOSFETs manufactured by onsemi. It shares the SupreMOS platform architecture with other devices in the lineup, offering consistent performance metrics for power switching. The TO-220-3 package provides a standardized footprint for industrial and commercial power electronics designs requiring robust mechanical stability.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical voltage, current, and package specifications to guarantee circuit compatibility.
