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Product Detailed Parameters
- Description：POWER MOSFET, N-CHANNEL, SUPERFE
- Series：SuperFET® III
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：12A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：250mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 290µA
- Gate Charge (Qg) (Max) @ Vgs：24 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1010 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：31W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF250N65S3L1-F154 is an N-channel MOSFET from the SUPERFET III series. It features a 650V drain-source voltage and a 12A continuous drain current. The device has a maximum on-resistance of 250mΩ and a typical gate charge of 24nC at specified Vgs. Power dissipation is rated at 39W. It operates within a temperature range of -55°C to +150°C and utilizes a TO-220 package for through-hole mounting.
Feature Summary
- SUPERFET III technology provides low on-resistance and fast switching characteristics.
- High avalanche energy capability ensures robust performance under transient conditions.
- TO-220 package facilitates efficient thermal management via heatsink mounting.
Applications
- High-frequency power supplies
- DC-DC converters
- Motor control circuits
Procurement Notes
Verify the specific suffix against official documentation, as variations may indicate different packaging or testing criteria. Confirm RoHS compliance status directly with the manufacturer's latest datasheet. Ensure the component meets all environmental regulations required for your specific deployment region before finalizing procurement orders.
Selection Notes
Select this component when a 650V rating and moderate current handling are required in a through-hole format. The 250mΩ on-resistance balances conduction losses with switching efficiency. Consider the thermal resistance of the TO-220 package for your heat dissipation strategy. Verify that the gate charge requirements align with your driver capabilities.
Part Context
This part belongs to onsemi's SUPERFET III family, which utilizes superjunction technology for high-voltage applications. These devices are designed to offer superior performance compared to traditional planar MOSFETs. The family targets efficient power conversion in various industrial and consumer electronics applications requiring reliable high-voltage switching.
Replacement Considerations
Check for direct pin-compatible alternatives within the same SUPERFET III lineup. Verify that any substitute matches the 650V rating, 250mΩ Rds(on), and TO-220 package dimensions. Ensure thermal and electrical characteristics are equivalent to maintain system reliability.
